@@陳彥潔-r4k WFM and Fin doping are all part of mVt strategy. WFM using p-1st is POR from Intel. FIn doping for Vt adjustment is a high risk one due to RDF. Intel used only WFM thk tuning (see my video below) only to enable mVT. Fin has no doping (UID = unintentional doping = E16/cm3 or below = background). ua-cam.com/video/L4g992GECKY/v-deo.html and also a comparison of p-1st vs n-1st ua-cam.com/video/xECJvXAPJdc/v-deo.html
1’.王兄說的RDF與SSD固態擴散 t家直到N5的HVM都沒用上 僅僅靠implant 還是能控制出不同的Vt 靠精準的控制依然能有限度的避免RDF 可以從N7 multi Vt那張圖看出來 有比較大sigma的就是用implant控出來的 實際上僅有2P 2N metal stack t家向我們展示了人定勝天 此外 從最近VLSI I家的multi vt則是有相對一致的sigma vt
2.另外N5 Si0.8Ge0.2 channel HVM後拔掉了 介面搞不定
you're right. SSD 很難的，imec 做了半天才發現實在不易也，I*有時會故意誤導，II 還是POR，能用還是用他，
sigma Vt 確實是最大挑戰! I家VLSI能發表，但是HVM又另當別論吧!
這篇講的不錯~~主題有KEEP住...不會東跳西跳的....個人認為當一個講者必須去思考如何讓聽眾能夠持續聽下去 而不感到無聊
Thanks!
TSMC N16到N7 看起來似乎還是利用大量的implant 做 punch through stopper 與 LDD, N16~10甚至還有打Vt adjust 是不是intel HP cell(3-3 or 4-4 Fin)性能更好的原因?
I/I for PTS/LDD/VT adjust 本來就是POR，所以能不換就不換的，T的N7應該是I的N10...只要沒有defects from I/I, 達到目的，then it's OK to keep them.
@@王不老說半导
似乎TSMC 到了n7才遇到RDF
N7後才開始做UID
Intel 第一代FF就採用UID了
@@陳彥潔-r4k Channel must be UID (to avoid RDF). RDF 對sigma Vt 影響很嚴重的，我有一個video分析:
ua-cam.com/video/UHrWbFE6fNI/v-deo.html
channel 下面的PTS是I/I，但必須以適當角度注入，fin 越來越細越來越高，I/I越來越難，不小心就把fin打壞了，所以用SSD，當然T可能有怪招!😜
T那時若用channel doping (planar POR), 必有其不但最後必須放棄!
@@王不老說半导 N16/N10 有Vt Adjust配上4種厚度的WFM(2N/2P)，不像Intel 22FF 就說自己UID。
@@陳彥潔-r4k WFM and Fin doping are all part of mVt strategy. WFM using p-1st is POR from Intel. FIn doping for Vt adjustment is a high risk one due to RDF. Intel used only WFM thk tuning (see my video below) only to enable mVT. Fin has no doping (UID = unintentional doping = E16/cm3 or below = background).
ua-cam.com/video/L4g992GECKY/v-deo.html
and also a comparison of p-1st vs n-1st
ua-cam.com/video/xECJvXAPJdc/v-deo.html