Very good presentation, on top of any other of that kind, as far as I am aware. Thanks for the extra labor required to make it available in English. I follow to part 2 asap... :-)
Dear Sam Ben-Yaakov, thanks for a great video. Avalanche energy measurement results is a function of the inductor that is used in the test setup. Tests performed with larger L will yield higher avalanche energy rating, but at a lower current that passes through the device. I think they should standardize this test method so that we could have true "apples to apples" comparison when it comes down to comparing different MOSFET devices.
Thank you very much Prof Ben-Yaakov. I’ve watched quite a few video’s on MOSFETs last weeks but none of them had this approach. It has been very helpful for me to further understand these devices and to get a ‘feeling’ of the parameters. Also the way you present these subjects makes me feel I’m attending a real lecture again but this time with the additional benefit of being able to wind back if didn’t get what you said for 100% the first time. I just love it. Thank you again for taking the effort to make these video’s!
A very insightful and useful video. I was looking for this kind of information to get a deeper understanding of transistor datasheet parameter values and the reason for their listing. Thank you very much for sharing this video, which is your knowledge, with the world. I am very grateful.
First type of in-depth explanation of datasheets I have come across, excellent!! Would be interesting with a similar treatment of BJT and general purpose op amp datasheets, if you find the time to do so. Thumbs up : )
Thanks for this explanation. Do you have any video talking about leakage inductance and its effect in switching transistor in flyback power supply? If not it could be an interesting matter, and an oportunity to talk about snubber circuits.
Great work by the master, highly appreciate . I have an humble opinion, when they say 650v. This should mean factory garantee at 650v. It should not mean once reach 650v it will start behave like a zener diode. It should start to breakdown at higher value than that may be 750v or 800v.
Not really รุ่ง ลอประยูร. It is not exactly 650V but close to it. Notice that at 650V the drain current at off is already 3mA, pretty much like approaching the Zener breakdown voltage.
Thank you for the video sir. iI have an LC-STAR SOLAR 12/1500 inverter,i put a 24v on by mistake and it burns the MOSFET,i cannot find the original MOSFET which is svd1404t , can i replace them with irf 1404? please help.
Very useful channel and very well explained. Can you make a video on how to read a datasheet of an operational amplifier and how to chose one for controlling a switching converter/active load?
Now that you are speaking about datasheets, can you put in your "to do list" on speaking about SPICE models of MOSFETs and if possible how to model a MOSFET with datasheet or how is it done. Thank you for your high quality lectures !
at 30:00 in your discussion about heat sink thermal design, I am confused a bit I have been always confused about this point for a long time and I would be really grateful if you can enlighten me please, my confusion comes from the fact that the way I understand it, the heat sink is counterproductive since it is adding additional thermal resistance to our design, so why try to lower the heat sink Rth if we can remove it and be better off since by definition a thermal resistance will resist the heat transfer to the ambient environment and we will get more heat trapped on the component. I know my understanding is not correct and I am missing something, please help.
Hi, The basic parameter in datasheet is the thermal resistance between junction and case which is just the starting point. You need case to ambient for full picture. With no heatsink the j to amb is (depending on package ) 20- 50 DegC/W. A moderate heatsink will have Rth of about 1 DegC/W. So without HS Rth J-amb 40 with heatsink about 2. I will go for the latter😊 Some datasheets specify j-amb.
Sir can you make video about igbtDear madam/ sir kindly find attached copy of hmc dadri report. Send quotation and send invoice already given po. data sheet which point we have considered to best igbt for circuit
יש לי איזה נושא שאני קצת מתקשה להבין ,אני אנסה להסביר את זה דרך הכתוב ואולי תוכל להפנות אותי לסרטון רלוונטי או להסביר : יש מכונה שאותה אני מנסה ללמוד ,יש full bridge שממותח ב 400 וולט,אחריו יש מעגל LLC ואחרי הLLC יש טרנספורמר עם יחס כריכות 1:2.5 ,המטרה בסוף היא לטעון קבל של כ200uF ל2000 וולט. נאמר לי שהקבל נטען לינארית וקבוע ,ויציאת הטרנספורמר בעצם משמשת כ ספק זרם קבוע של 5 אמפר ,אני לא מצליח להבין למה זה מקור זרם ,המעגל LLC גורם לזה ? לא יהיה פשוט ביציאה מהטרנספומר אות סינוס בגובה של 800 וולט כפול 2.5 ?
Dr Yakov- Or anyone with the knowledge.. Can you explain how to interpret the definition of DRAIN and SOURCE in light of the operation of synchronous buck circuit constructed entirely of N channel power mosfet transistors and an LC filter. By synchronous buck converter I mean -the drain of a n channel transistor connected to a positive supply rail. -the source of this n channel transistor connected to the drain of a second n channel transistor -the source of the second n channel transistor connected to a return to the positive supply -an L-C filter is connected to the node of first transistor source and second transistor drain. A synchronous buck converter achieves higher efficiency because the bottom transistor replaces a schottky diode. But, please imagine the current flow when the bottom transistor is "ON". The current must come from the return, flow INTO the terminal called SOURCE, through the transistor as majority carriers (not through the parasitic diode) and exit the terminal called DRAIN. This must be the correct direction of the current because the current through the L cannot change instantaneously (in this topology) This direction is opposite the normal convention when Ids versus Vds for various Vgs is given. For 1 thing, Ids is negative for the bottom transistor. The current is flowing from source to drain. We never see transfer curves with Ids < 0 for N channel mosfets. For another thing, I was always taught the drain and source terminals of a MOSFET where interchangeable (neglecting the parasitic diode) and that drain and source are defined by the direction of current flow.
I don't consider myself as an expert, but (with very few useful exceptions) reduce your circuit to the MOSFET and the battery source, then the Source pin is connected toward the Negative terminal of the battery for a N chanel MOSFET and toward the Positive terminal of the battery source for a P chanel MOSFET... OTHERWISE, the intrinsic diode won't block the current when you use the transistor in a blocking mode. (We can use a P Chanel MOSFET in the reverse way, in order to protect the circuit against accidental reverse voltage input.) Technically, because of the pinching, the concentration of the doping elements **may** differ between the Source and the Drain too, so UNLESS it is explicitly stated on the datasheet, you should NOT invert them (even if the intrinsic diode does not bother your design) without careful testing. As example, the reversed N Channel may overheat. But you still have the intrinsic diode, in most cases, which will then try to reach the same difference of voltage than the one present at the Channel (since they are like as in parallel; see ua-cam.com/video/ZZDdlAgZfvI/v-deo.html, around 1:47, as an illustration of the problem of an inverted N Channel MOSFET where it seems that its intrinsic diode just can't keep up... the MOSFET heats so fast that Julian has to disconnect it after few seconds). Take a look too at part 2 of this presentation, ua-cam.com/video/5A-THexe6u8/v-deo.html, around 8:55 :-)
Very informative lecture. Minor detail "Joules" is pronounced in English as "Jools", like "jewels", rather than "jowls". Your English is not quite perfect, but my Hebrew is zero, so thank you!
Indeed, my English is far from being perfect. But... I am still a person of facts and not of hearsay. The way I pronounce Joules is OK albeit not traditional. Look up www.merriam-webster.com/dictionary/joule . Also, see discussion at english.stackexchange.com/questions/313660/joule-pronounced-jowl/390209
@@sambenyaakov I meant to praise your English, not to belittle it. Now I discover Joules are named for James Prescott Joule. I always assumed it was named for a Frenchman. Now I'll have to figure out what the north-country (Lancashire) pronunciation of the name should be!
Many of manufacturers claim that their MOSFETs have the capability to withstand hundreds of Amperes of current, but one thing that makes me doubt their claim is the maximum rating of the pins themselves. I think they have much lower current rating than the MOSFET themselves are capable of, what do you think?
Thanks for participating in conversation. Normally the pins are capable to carry the specifies current. If anything, the bonding within the package are more of a bottleneck.
@@sambenyaakov I remember I watched a video on UA-cam from a quite reputable source about MOSFET max current testing and they were testing TO-220 MOSFET and the pins melted at 75A (forgot which video, I need to dig that up again), and the fact that there is an AWG ampacity chart in where a wire with similar diameter to the MOSFET pins is rated for a much lower current. These are the main sources of my doubt.
@@kaikart123 Well, a video is not the best source of knowledge. The malfunction could have been due to misunderstanding of datasheet. Passing 75A through a TO220 would require extraordinary cooling (water cooling at least) otherwise the whole device will melt. So it has nothing to do with the current carrying capability of the leads.
Dr. Sam, thank you very much for the English version. Great lecture with a lucid explanation of an esoteric topic.
I was reading datasheet like a newspaper before this marvelous serious lecture.....that's where technology come from
Thanks for comment.
Very good presentation, on top of any other of that kind, as far as I am aware. Thanks for the extra labor required to make it available in English. I follow to part 2 asap... :-)
The best video at mosfet thanks from Colombia
Thanks
Dear Sam Ben-Yaakov, thanks for a great video. Avalanche energy measurement results is a function of the inductor that is used in the test setup. Tests performed with larger L will yield higher avalanche energy rating, but at a lower current that passes through the device. I think they should standardize this test method so that we could have true "apples to apples" comparison when it comes down to comparing different MOSFET devices.
Thanks for the info! I was not aware on that. Yes, this is a problem.
My students like you. Your clear, accurate and free of arrogance. Thank you.
Hi, very happy with your comment.
Tank you sam from algeria you are my Prof in engineering electronique.
Thanks Nilo for kind words. Greetings from Israel🙂
Thank you sir,for providing english version
Thank you for this wonderful video! You really have very good lectures :)
Looking forward to the next video.
Thanks for comment. Comments like yours keep me going
Thank you very much Prof Ben-Yaakov. I’ve watched quite a few video’s on MOSFETs last weeks but none of them had this approach. It has been very helpful for me to further understand these devices and to get a ‘feeling’ of the parameters.
Also the way you present these subjects makes me feel I’m attending a real lecture again but this time with the additional benefit of being able to wind back if didn’t get what you said for 100% the first time. I just love it. Thank you again for taking the effort to make these video’s!
Hi, Thanks for taking the time to write. Comments like this keep me going.
Great video! Very valuable practical information. Thank you very much Professor.
😊Thanks
A very insightful and useful video. I was looking for this kind of information to get a deeper understanding of transistor datasheet parameter values and the reason for their listing. Thank you very much for sharing this video, which is your knowledge, with the world. I am very grateful.
Thanks
Thank you so much for making it easier to understand in detail, really found it useful and found it simple 😊
👍
Like very much the detailed explanation. Excellent work!
Thanks
Very well explained! Thanks a lot.
Thanks
First type of in-depth explanation of datasheets I have come across, excellent!! Would be interesting with a similar treatment of BJT and general purpose op amp datasheets, if you find the time to do so. Thumbs up : )
Thanks. Good idea will try.
Thanks for this explanation. Do you have any video talking about leakage inductance and its effect in switching transistor in flyback power supply? If not it could be an interesting matter, and an oportunity to talk about snubber circuits.
EXCELLENT COURSE! THANK YOU VERY MUCH!
Thanks for comments
Thank you my favorite professor
😊
Thanks Sir for explaining so elaborately
👍🙏😊
Clear, efficient, useful ... thanks a lot
Thanks
Great work by the master, highly appreciate .
I have an humble opinion, when they say 650v. This should mean factory garantee at 650v. It should not mean once reach 650v it will start behave like a zener diode. It should start to breakdown at higher value than that may be 750v or 800v.
Not really รุ่ง ลอประยูร. It is not exactly 650V but close to it. Notice that at 650V the drain current at off is already 3mA, pretty much like approaching the Zener breakdown voltage.
Thanks, I really enjoy your videos.
Thanks
Excellent! The idea of walking through a datasheet is great. One on op-amps, perhaps?
Thanks. Will try to p prepare one.
It was a very informative lecture❤
😊🙏
Thank you...it's very good
Thanks
Once again, excellent video.
👍😊
thank you very much
Thank everyone
Thank you for the video sir. iI have an LC-STAR SOLAR 12/1500 inverter,i put a 24v on by mistake and it burns the MOSFET,i cannot find the original MOSFET which is svd1404t , can i replace them with irf 1404? please help.
Sorry too busy to look into it. Check datasheets.
Very useful channel and very well explained. Can you make a video on how to read a datasheet of an operational amplifier and how to chose one for controlling a switching converter/active load?
Good points. Will try.
Now that you are speaking about datasheets, can you put in your "to do list" on speaking about SPICE models of MOSFETs and if possible how to model a MOSFET with datasheet or how is it done.
Thank you for your high quality lectures !
Thank you.
Hello Pro. Ben-Yakov: I have a question regarding the avalanche current IA, is it an average or peak current value?
Peak
@@sambenyaakov thanks
thank you very helpful, subbed
Thanks for the sub!
Very relevant content.
Thanks.
at 30:00 in your discussion about heat sink thermal design, I am confused a bit I have been always confused about this point for a long time and I would be really grateful if you can enlighten me please, my confusion comes from the fact that the way I understand it, the heat sink is counterproductive since it is adding additional thermal resistance to our design, so why try to lower the heat sink Rth if we can remove it and be better off since by definition a thermal resistance will resist the heat transfer to the ambient environment and we will get more heat trapped on the component. I know my understanding is not correct and I am missing something, please help.
Hi, The basic parameter in datasheet is the thermal resistance between junction and case which is just the starting point. You need case to ambient for full picture. With no heatsink the j to amb is (depending on package ) 20- 50 DegC/W. A moderate heatsink will have Rth of about 1 DegC/W. So without HS Rth J-amb 40 with heatsink about 2. I will go for the latter😊 Some datasheets specify j-amb.
@@sambenyaakov Oh Thank you very much Sir, it seems I missed this point and it was the source of my confusion.
How do we calculate realistic continuous power with a typical heat sink?
You need the value of the thermal resistance of the heatsink
Thanks!
Welcome!
Very informative thank you 🙏
Thanks
Sir can you make video about igbtDear madam/ sir
kindly find attached copy of hmc dadri report. Send quotation and send invoice already given po.
data sheet which point we have considered to best igbt for circuit
ממש תודה ,
אני מהנדס אלקטרוניקה ומנסה להיכנס לתחום הPOWER .
מאוד מאוד עוזר .
תודה
תודה. שמחתי.
יש לי איזה נושא שאני קצת מתקשה להבין ,אני אנסה להסביר את זה דרך הכתוב ואולי תוכל להפנות אותי לסרטון רלוונטי או להסביר :
יש מכונה שאותה אני מנסה ללמוד ,יש full bridge שממותח ב 400 וולט,אחריו יש מעגל LLC ואחרי הLLC יש טרנספורמר עם יחס כריכות 1:2.5 ,המטרה בסוף היא לטעון קבל של כ200uF ל2000 וולט.
נאמר לי שהקבל נטען לינארית וקבוע ,ויציאת הטרנספורמר בעצם משמשת כ ספק זרם קבוע של 5 אמפר ,אני לא מצליח להבין למה זה מקור זרם ,המעגל LLC גורם לזה ?
לא יהיה פשוט ביציאה מהטרנספומר אות סינוס בגובה של 800 וולט כפול 2.5 ?
שכחתי לציין שאחרי הטרנספורמר יש מיישר דיודות
יצא מבולבל בעברית.
כתוב לי ל
sby@bgu.ac.il
Where can I get data sheets for mosfet
Google and download from manufacturer site
Dr Yakov- Or anyone with the knowledge.. Can you explain how to interpret the definition of DRAIN and SOURCE in light of the operation of synchronous buck circuit constructed entirely of N channel power mosfet transistors and an LC filter. By synchronous buck converter I mean
-the drain of a n channel transistor connected to a positive supply rail.
-the source of this n channel transistor connected to the drain of a second n channel transistor
-the source of the second n channel transistor connected to a return to the positive supply
-an L-C filter is connected to the node of first transistor source and second transistor drain.
A synchronous buck converter achieves higher efficiency because the bottom transistor replaces a schottky diode. But, please imagine the current flow when the bottom transistor is "ON". The current must come from the return, flow INTO the terminal called SOURCE, through the transistor as majority carriers (not through the parasitic diode) and exit the terminal called DRAIN. This must be the correct direction of the current because the current through the L cannot change instantaneously (in this topology)
This direction is opposite the normal convention when Ids versus Vds for various Vgs is given.
For 1 thing, Ids is negative for the bottom transistor. The current is flowing from source to drain. We never see transfer curves with Ids < 0 for N channel mosfets.
For another thing, I was always taught the drain and source terminals of a MOSFET where interchangeable (neglecting the parasitic diode) and that drain and source are defined by the direction of current flow.
I don't consider myself as an expert, but (with very few useful exceptions) reduce your circuit to the MOSFET and the battery source, then the Source pin is connected toward the Negative terminal of the battery for a N chanel MOSFET and toward the Positive terminal of the battery source for a P chanel MOSFET... OTHERWISE, the intrinsic diode won't block the current when you use the transistor in a blocking mode. (We can use a P Chanel MOSFET in the reverse way, in order to protect the circuit against accidental reverse voltage input.)
Technically, because of the pinching, the concentration of the doping elements **may** differ between the Source and the Drain too, so UNLESS it is explicitly stated on the datasheet, you should NOT invert them (even if the intrinsic diode does not bother your design) without careful testing. As example, the reversed N Channel may overheat. But you still have the intrinsic diode, in most cases, which will then try to reach the same difference of voltage than the one present at the Channel (since they are like as in parallel; see ua-cam.com/video/ZZDdlAgZfvI/v-deo.html, around 1:47, as an illustration of the problem of an inverted N Channel MOSFET where it seems that its intrinsic diode just can't keep up... the MOSFET heats so fast that Julian has to disconnect it after few seconds).
Take a look too at part 2 of this presentation, ua-cam.com/video/5A-THexe6u8/v-deo.html, around 8:55 :-)
I need this i need this ! I need anything about power electrictrinic schematic explained
😊👍🙏
Very informative lecture. Minor detail "Joules" is pronounced in English as "Jools", like "jewels", rather than "jowls". Your English is not quite perfect, but my Hebrew is zero, so thank you!
Indeed, my English is far from being perfect. But... I am still a person of facts and not of hearsay. The way I pronounce Joules is OK albeit not traditional. Look up www.merriam-webster.com/dictionary/joule . Also, see discussion at english.stackexchange.com/questions/313660/joule-pronounced-jowl/390209
@@sambenyaakov I meant to praise your English, not to belittle it. Now I discover Joules are named for James Prescott Joule. I always assumed it was named for a Frenchman. Now I'll have to figure out what the north-country (Lancashire) pronunciation of the name should be!
@@TomLeg 👍😊
Many of manufacturers claim that their MOSFETs have the capability to withstand hundreds of Amperes of current, but one thing that makes me doubt their claim is the maximum rating of the pins themselves. I think they have much lower current rating than the MOSFET themselves are capable of, what do you think?
Thanks for participating in conversation. Normally the pins are capable to carry the specifies current. If anything, the bonding within the package are more of a bottleneck.
@@sambenyaakov I remember I watched a video on UA-cam from a quite reputable source about MOSFET max current testing and they were testing TO-220 MOSFET and the pins melted at 75A (forgot which video, I need to dig that up again), and the fact that there is an AWG ampacity chart in where a wire with similar diameter to the MOSFET pins is rated for a much lower current. These are the main sources of my doubt.
@@kaikart123 Well, a video is not the best source of knowledge. The malfunction could have been due to misunderstanding of datasheet. Passing 75A through a TO220 would require extraordinary cooling (water cooling at least) otherwise the whole device will melt. So it has nothing to do with the current carrying capability of the leads.
@@sambenyaakov Aaah yes, you are right. The person in the video didn't attach a heatsink the MOSFET when testing it. I see now.