Great presentation, very clear for me to understand why I need to increase the switching speed of the MOS and why the switching speed is limited, very helpful for my design work!
Extremely helpful and applicable info in this talk. Pete did a great job walking us through the graphs which were cleanly constructed. Especially appreciate the thoughtful exploration of tradeoffs. And high-five to Pete for crisply answering questions in the Q&A. Wish everyone did it that way. Thank you.
Thank you Thank you so many answers to questions i have been hunting for and yet more answers answered BEFORE i had to start the hunt thus saving me yet another answer hunt ....phew ! so i for one am bookmarking this talk for later reference and yes thankyou once more 😀👍
MOSFET resistance goes up with temperature. PN junction forward voltage (not resistance) drops with temperature. Rds(on) across the channel of a MOSFET is not a PN junction.
@@monolithicpowersystemsmps534 ok. I am sorry. My mistake. I just learned something. Thank you for your reply. I.subscribed to your channel, to better learn from you.
@@monolithicpowersystemsmps534 Motor Driver in consumer market🤔🤣. What ist with power mosfets and high,low Mosfet driver IC's for voltage regulation. Sorry 😪, you didn't answer the question. Note E sit down please.
After 3:41, on the diagram of upper side N-Channel mosfet it is written as "VIN + Vg". If you apply more than 20 volts to gate of N Channel mosfet, bye bye to mosfet. Let me give you an example. Now a days i am working on a circuit. Supply voltage, I mean VIN is 44.2 Volts. According to your calculation 44.2 Volts + "let's say" 5 Volts = 49.2 Volts. So it is over and over and over and over than 20 Volts limit. If you do not believe me test what i say. For n channel mosfets Vgs is so important. Vgs mostly can not be more than 20 volts. Some n channel mosfets accept 25 volts. That's it can not be not more.
Obviously, the high side gate cannot be driven instantly to VIN+VG when the HS FET is turned off and the phase node is at 0V. The HS gate driver is typically referenced to the phase node, and the gate voltage is driven to 12V above the phase node. This was not shown to simplify the discussion. Once the HS is turned on and the phase node has reached VIN, then the gate is held at VIN+VG, around 12V above the input supply.
@@monolithicpowersystemsmps534 First of all respectfully i want to thank for your kind reply. Could you please share a sample full circuit to make us understand this explanation better. As i mentioned in my first comment, nowadays i am working on a circuit to drive a 44.2V and 2500 watts bldc motor. I made a circuit uses p channel mosfets for upper side and n channel mosfets for lower side. The problem is p channel mosfets' capacity is not as enough as n channel mosfets generally. That's why i have to use multiple parallel p channel mosfets to reach my power without any damage to p channel mosfets. This case causes pcb space problem. My pcb size is limited depands on my project. That's why i am so interested about your subject. If you share a sample full circuit i will be so glad. Thanks. Note that: I have just 12s (44.2V battery). I do not have any other power source.
Great presentation, very clear for me to understand why I need to increase the switching speed of the MOS and why the switching speed is limited, very helpful for my design work!
Glad it was helpful!
Extremely helpful and applicable info in this talk. Pete did a great job walking us through the graphs which were cleanly constructed. Especially appreciate the thoughtful exploration of tradeoffs. And high-five to Pete for crisply answering questions in the Q&A. Wish everyone did it that way. Thank you.
Glad it was helpful!
Thank you very much!
Glad you enjoyed it!
Thank you Thank you so many answers to questions i have been hunting for and yet more answers answered BEFORE i had to start the hunt thus saving me yet another answer hunt ....phew ! so i for one am bookmarking this talk for later reference and yes thankyou once more 😀👍
Glad you liked it!
Thanks Pete Very informative !!
Glad it was helpful!
very useful and well explained, thanks for uploading this talk.
Glad it was helpful!
Very informative.
Glad you liked it
Thanks!
A part of this comment was erased. (I Made an ignorant remark).
Like this lecture for its quality of practical simplicity.
MOSFET resistance goes up with temperature. PN junction forward voltage (not resistance) drops with temperature.
Rds(on) across the channel of a MOSFET is not a PN junction.
@@monolithicpowersystemsmps534 ok. I am sorry. My mistake.
I just learned something.
Thank you for your reply.
I.subscribed to your channel, to better learn from you.
Great, welcome to the channel.
@@monolithicpowersystemsmps534 thank you.
Nice
Glad you liked it
Why didn't you release divers datasheets of your products in consumer area?
Hi, we have motor driver datasheets available at www.monolithicpower.com/en/products/motor-drivers-and-motor-controllers/stepper-motor-drivers.html
@@monolithicpowersystemsmps534 Motor Driver in consumer market🤔🤣. What ist with power mosfets and high,low Mosfet driver IC's for voltage regulation. Sorry 😪, you didn't answer the question. Note E sit down please.
After 3:41, on the diagram of upper side N-Channel mosfet it is written as "VIN + Vg". If you apply more than 20 volts to gate of N Channel mosfet, bye bye to mosfet. Let me give you an example. Now a days i am working on a circuit. Supply voltage, I mean VIN is 44.2 Volts. According to your calculation 44.2 Volts + "let's say" 5 Volts = 49.2 Volts. So it is over and over and over and over than 20 Volts limit. If you do not believe me test what i say. For n channel mosfets Vgs is so important. Vgs mostly can not be more than 20 volts. Some n channel mosfets accept 25 volts. That's it can not be not more.
Obviously, the high side gate cannot be driven instantly to VIN+VG when the HS FET is turned off and the phase node is at 0V. The HS gate driver is typically referenced to the phase node, and the gate voltage is driven to 12V above the phase node. This was not shown to simplify the discussion. Once the HS is turned on and the phase node has reached VIN, then the gate is held at VIN+VG, around 12V above the input supply.
@@monolithicpowersystemsmps534 First of all respectfully i want to thank for your kind reply. Could you please share a sample full circuit to make us understand this explanation better.
As i mentioned in my first comment, nowadays i am working on a circuit to drive a 44.2V and 2500 watts bldc motor. I made a circuit uses p channel mosfets for upper side and n channel mosfets for lower side. The problem is p channel mosfets' capacity is not as enough as n channel mosfets generally. That's why i have to use multiple parallel p channel mosfets to reach my power without any damage to p channel mosfets. This case causes pcb space problem. My pcb size is limited depands on my project.
That's why i am so interested about your subject. If you share a sample full circuit i will be so glad. Thanks.
Note that: I have just 12s (44.2V battery). I do not have any other power source.
38:56 41:49 that was total cringe.