Short Channel Effect - English Version

Поділитися
Вставка
  • Опубліковано 19 лис 2024

КОМЕНТАРІ • 26

  • @suresh1334
    @suresh1334 3 роки тому +3

    sir, can you please upload the remaining videos of the short channel effects(bulk punch through, surface scattering, velocity saturation, impact ionization, hot electron) as I could not find a proper explanation regarding this effects

  • @pavanedhubilli60
    @pavanedhubilli60 2 роки тому +1

    Sir please explain short channel effect in a simple way ...

  • @harshakanamarlapudi1681
    @harshakanamarlapudi1681 4 роки тому +1

    Can u make a video about dibl and other short channel effects..

  • @SaiKiran-rr7gn
    @SaiKiran-rr7gn 3 роки тому

    plz upload videos on power dissipation, level shifters, second order effects

  • @maryamzahid4680
    @maryamzahid4680 5 років тому +1

    What is resistive region....velocity saturation....channel lenght modulation and saturation.....

  • @priyamurugesan7975
    @priyamurugesan7975 4 роки тому +1

    Sir, u mentioned in this video >250nm are submicron & below

    • @analoglayout
      @analoglayout  4 роки тому +1

      28 and below is deep sub micron device's , some papers said finfet are deep sub micron , but in general 28nm and below is deep sub micron device's

  • @darshanbnaik
    @darshanbnaik 6 років тому +1

    bro you have to explain short channel effect but you ended up saying pinch off really i didnt understood

    • @analoglayout
      @analoglayout  6 років тому +1

      il upload separate video for all topic individual

    • @darshanbnaik
      @darshanbnaik 6 років тому

      @@analoglayout ok sir

  • @imhareesh9096
    @imhareesh9096 5 років тому +1

    Sir Gate length=channel length..?

    • @analoglayout
      @analoglayout  5 років тому

      Ya

    • @imhareesh9096
      @imhareesh9096 5 років тому

      @@analoglayout sir... Gate width=gate oxide width..?
      Plz clarify me

    • @girishgk395
      @girishgk395 4 роки тому

      Gate length is not equal to channel length.. Channel Length is equal to gate length - overlap of source and drain

  • @rakeshkalluri6982
    @rakeshkalluri6982 6 років тому +1

    I don't understand .. if density increases .yield decrease

  • @brittokhan5278
    @brittokhan5278 10 місяців тому +2

    Sir you are giving so many unnecessary sentences. This is disturbing 😢

    • @analoglayout
      @analoglayout  10 місяців тому

      My old video have some communication issues, I'm trying to update the quality of my video in recent days, thx for the open comment

  • @maryamshahbazi6107
    @maryamshahbazi6107 3 місяці тому +1

    Unfortunately I could not follow past 8 minutes. Too many words and covered no good substance in 8 minutes. 0/10 for me.

    • @analoglayout
      @analoglayout  3 місяці тому

      Thanks for the feed back, i will try to improve the content quality in future

  • @lohitkumard2766
    @lohitkumard2766 6 років тому

    Add enhancement mosfet working video

  • @tusharbirari959
    @tusharbirari959 5 років тому +1

    Hi

  • @pritishthapa2688
    @pritishthapa2688 6 років тому +1

    no better explaination

    • @analoglayout
      @analoglayout  6 років тому +3

      Pls , if u can explain better then me , kindly upload Ur video , including me others will get benefits , TNX in advance