For an ideal control, I'd also suggest a gate within the channel in addition to all around the channel. Maybe (or for sure), someone has already though about it already. Is it physically realised or what's the latest advancement with regards to the ideal device design?
If depletion regions meet while making the channel shorter, then the built-in potential barrier would be higher due to higher built-in in E field opposing the flow of electrons from n to p side right?
How you say that with decrease in width, VT increases. When we decrease width total region also decreases, now gate voltage in overall has to deplete/invert lessor region. Any further explanation?
There is an equation that I can't find in any book or scientific article referring to the letter '' c '', what is the origin of it if there is a calculation behind or something? I would very much like that source that explains itself broadly on the subject. Or at least the equation of (c). It is related to zero temperature coefficient [ZTC] Eq: μn2 = μn1*(((T1)/(T2)))^(c)
Many many thanks Sir....... From India.
Thanks for the awesome lecture professor.
Thank you very much sir. Please keep uploading the videos as your concepts are very clear.
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@Jon Terrence Yea, have been using Flixzone for since december myself :)
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For an ideal control, I'd also suggest a gate within the channel in addition to all around the channel. Maybe (or for sure), someone has already though about it already. Is it physically realised or what's the latest advancement with regards to the ideal device design?
Excellent lecture. Thank you
Awesome
If depletion regions meet while making the channel shorter, then the built-in potential barrier would be higher due to higher built-in in E field opposing the flow of electrons from n to p side right?
امکان توضیح این موارد رو دارین؟
GIDL,DIBL
این موارد رو در ویدئوهاتون ندیدم.ممنون از لطف تون
Thank You professor,
18:51 - Didnt you wrote an equation for Id in linear region of operation (for small Vds). As you wrote Qch equation that is not for saturation?
Dear sir by decreasing width of the transistor how Vt is increasing
How you say that with decrease in width, VT increases. When we decrease width total region also decreases, now gate voltage in overall has to deplete/invert lessor region. Any further explanation?
Professor do you have any lecture that describe GIDL mechanism?
听君一席话，胜读十年书！
Afarin
There is an equation that I can't find in any book or scientific article referring to the letter '' c '', what is the origin of it if there is a calculation behind or something? I would very much like that source that explains itself broadly on the subject. Or at least the equation of (c).
It is related to zero temperature coefficient [ZTC]
Eq:
μn2 = μn1*(((T1)/(T2)))^(c)
ask chatgpt
have no idea whats happening here
Start with basic fundamentals of electric circuits. Are you doing an EE degree?
"German"iums are very smart.
Aber teuer
Sir, Do you have any references or materials for FinFETs?