according to you, when Vb is negative, depletion is already created, so shouldn't we require less Vg to create the inversion layer. Because gate voltage does the job of both creating the depletion layer and then the inversion layer, so if the negative Vb has already help in creating the depletion layer, it should require less Vg( meaning less Vth) to create inversion layer.
@@JKBEAST more negative charges between source and drain will require us to have more positive charge on the gate since the amount of holes and electrons is proportional to each other
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I have one doubt my friend .....if body is in negative potential negative electrons formed below the SiO2 layer....hence n channel is formed.....how is that....
The holes of the channel will go towards Vb terminal, therefore depletion region forms, (negative ions) these ions are not free charge carriers, they are just ions sitting on that channel, when we apply Vg then we will get in to inversion, in that process free charge carriers will come from N+ regions and channel will be formed for conduction
@@vlsiorg its wrong, the formula doesn't have a mod in vbs, its just Vsb, so we just don't look at the difference, we look at whether body is negative or positive wrt the source. And it varies differently accorfing to that.
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according to you, when Vb is negative, depletion is already created, so shouldn't we require less Vg to create the inversion layer. Because gate voltage does the job of both creating the depletion layer and then the inversion layer, so if the negative Vb has already help in creating the depletion layer, it should require less Vg( meaning less Vth) to create inversion layer.
Agree with you with the increase in |VBbs| Vth should decrease.
I have the exact same question
@@JKBEAST more negative charges between source and drain will require us to have more positive charge on the gate since the amount of holes and electrons is proportional to each other
Hi, we have created a free first level course for Analog design engineers. Please do join and share your feedback.
www.udemy.com/course/mosfet-foundation-course-for-analog-circuit-design/ Thank you
I have one doubt my friend .....if body is in negative potential negative electrons formed below the SiO2 layer....hence n channel is formed.....how is that....
The holes of the channel will go towards Vb terminal, therefore depletion region forms, (negative ions) these ions are not free charge carriers, they are just ions sitting on that channel, when we apply Vg then we will get in to inversion, in that process free charge carriers will come from N+ regions and channel will be formed for conduction
according to u (formula) .. whether vb is positive or negative vth always increases? ... I think something wrong with this
Hi, we need to look at the VB-VS potential difference and not the absolute value of VB . Hope this helps
@@vlsiorg its wrong, the formula doesn't have a mod in vbs, its just Vsb, so we just don't look at the difference, we look at whether body is negative or positive wrt the source. And it varies differently accorfing to that.
is body effect same as proximity effects in mosfet ?
depletion region is not created until we apply Vg, so this is wrong answer.
Sir can you post some mtech VLSI interview questions with answer pls sir
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