nanoHUB-U MOSFET Essentials L5.3: Additional Topics - High Electron Mobility Transistors (HEMTs)

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  • Опубліковано 24 лис 2024

КОМЕНТАРІ • 5

  • @michalpecz9433
    @michalpecz9433 3 роки тому +1

    Finally lecture that isn't made on low quality webcam with papers, and which has understandable accent. You saved me.

  • @SaadmanAbedinMustavi
    @SaadmanAbedinMustavi 4 роки тому

    Your lectures keep me motivated to dive deep into this field more and more. Thank you for the effort.

  • @percyvile
    @percyvile 3 роки тому

    Great video, well spoken and lots of jumping off points for further information!

  • @damny0utoobe
    @damny0utoobe 3 роки тому

    Thank you for the great lecture on HEMT .

  • @chevestong
    @chevestong 2 роки тому +1

    00:00 Lecture 5.3: High Electron Mobility Transistors (HEMTs)
    00:24 Transistors
    01:04 GaAs MESFET
    03:17 "Modulation doping"
    04:17 Modulation doping
    05:22 Equilibrium energy band diagram
    06:34 Parallel conduction should be avoided
    07:28 Why dope the wide bandgap layer?
    08:37 Scattering mechanisms (mobility)
    10:41 Mobility vs. temperature
    11:20 Mobility vs. temperature (modulation doped)
    12:10 Molecular beam epitaxy
    12:31 From physics to technology
    13:04 Heterostructure FET
    14:13 Why delta doping?
    14:56 Names
    15:17 InGaAs HEMT
    16:44 Layer structure
    17:03 Applications
    17:37 InGaAs HEMT technology
    18:31 Comparison with experiment: InGaAs HEMTs
    19:22 III-V MOSFETs
    19:48 Summary
    20:43 Next topic