RF GaN Device Models and Extraction Techniques

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Gallium Nitride (GaN) devices continue to advance in market acceptance for 5G, radar, and power electronics due to their high-power handling capability and linearity. GaN technology outperforms other RF technologies because it can simultaneously offer the highest power, gain, and efficiency combination at a given frequency. In this video, we review market trends, technology and challenges in using these devices. In 2017, two new physics-based GaN models were accepted as industry standard amid a backdrop of other models. Besides using DC-IV and small signal S-parameters, we propose new techniques for the use of large signal measurements for model parameter extraction.
Speakers:
• Raj Sodhi, Device Modeling Segment, Keysight EEsof EDA, Keysight Technologies
• Dr. Ujwal Radhakrishna, professor at Notre Dame University
• Dr. Yogesh Chauhan, professor at IIT Kanpur
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