MOS Transistor Basics-III

Поділитися
Вставка
  • Опубліковано 19 лис 2024

КОМЕНТАРІ • 16

  • @verilog_programming
    @verilog_programming Рік тому +5

    He is the very best teacher in imparting knowledge about VLSI design

  • @shreyalgupta
    @shreyalgupta 8 місяців тому +3

    These lectures are soooo good!

  • @shreyasdeo3801
    @shreyasdeo3801 3 роки тому +9

    Every small point he says is a point worth noting in notebook !

  • @storgerbenevolent5678
    @storgerbenevolent5678 4 роки тому +5

    thanks for sharing your knowledge

  • @sparshsharma4508
    @sparshsharma4508 3 роки тому +11

    for body effect, If we tie body terminal to most negative voltage, it will push the electrons from substrate to Si-SiO2 interface, and hence will ease channel formation. Isn't it correct ?

  • @dhruvandangar9972
    @dhruvandangar9972 3 роки тому +1

    at 13.57 i think sir has taken wrong side electric field due to Vd, tell me if i am wrong.

  • @theboringinvestor7354
    @theboringinvestor7354 4 роки тому +2

    At 29:31 i think in the last equation of Id the V(x)=Vdsat not Vdsat/2.

  • @jannatnaaz3454
    @jannatnaaz3454 5 років тому +3

    Sir ye jo niche black me statement aara pls ise hataye....bahot disturbing hai..notes nahi likhpate