Lecture 30 (CHE 323) Chemical Mechanical Polishing (CMP)

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  • Опубліковано 8 вер 2024

КОМЕНТАРІ • 10

  • @axelmeramas976
    @axelmeramas976 4 роки тому +6

    you are a life saver, bless you Chris

  • @possible-realities
    @possible-realities Рік тому +1

    It's interesting that CMP introduces lots of particles, which you otherwise want to avoid at all costs in wafer processing. I suppose that it's tightly controlled in a way that you can get rid of them afterwards.

  • @kylee5621
    @kylee5621 7 років тому +3

    thanks. your lectures are really helpful

  • @ChrisMack
    @ChrisMack  9 років тому +6

    PDF copies of all the slides in this course are available at:
    www.lithoguru.com/scientist/CHE323/course.html

  • @user-ib1mr4xk3p
    @user-ib1mr4xk3p 3 роки тому

    thank you for nice teaching =)

  • @user-sk6vh2lc8z
    @user-sk6vh2lc8z 3 роки тому

    thank you so much.

  • @toddtaylor6110
    @toddtaylor6110 3 роки тому

    Rodel....Thanks Bill B......

  • @chinoisbase
    @chinoisbase 2 роки тому +1

    HI, do you have any simple article, work or book, regarding CMP parameters (downforce, table-chuck speed, slurry flow) for a standard 4 inchs silicon wafer? Thank you

  • @sonal8668
    @sonal8668 2 роки тому

    Could you please explain reflow and etch back little more? Is it still used in the industry?

  • @vikrampratapsingh6846
    @vikrampratapsingh6846 Рік тому

    tq