The lectures are so good. By the meantime I got some questions: 1. Why you don't want H in the RIE process? 2. What causes etched features at one edge of the wafer to have higher etch rates? 3. What causes the overall wafer-scale etch rate variation pattern observed in wafers?
1. I'm not sure I uderstand the question. Sometime you do want H (hydrogen) in the RIE process. 2&3. Across-wafer nonuniformity of etch rate is mostly due to nonuniformity is plasma properties in the etch chamber, which in turn is a function of gas flow uniformity and the ability to deliver power uniformly to that gas.
Watching this on 1.25 speed was excellent. Barely had to pause or playback the video. No fluff.. just good learning. Thank you.
PDF copies of all the slides in this course are available at:
www.lithoguru.com/scientist/CHE323/course.html
Thank you very much. Your tutorial videos are so useful.
The lectures are so good. By the meantime I got some questions:
1. Why you don't want H in the RIE process?
2. What causes etched features at one edge of the wafer to have higher etch rates?
3. What causes the overall wafer-scale etch rate
variation pattern observed in wafers?
1. I'm not sure I uderstand the question. Sometime you do want H (hydrogen) in the RIE process.
2&3. Across-wafer nonuniformity of etch rate is mostly due to nonuniformity is plasma properties in the etch chamber, which in turn is a function of gas flow uniformity and the ability to deliver power uniformly to that gas.
outstanding!
ers