Hey, here's a dedicated CBSE course on our website where you can practice all the concepts related to this video and more. And oh, it's always free. www.khanacademy.org/science/in-in-class-12th-physics-india/in-in-semiconductors
This video is amazing but ' these are only in the engineering domains we don't have to worry about them at all ' kinda makes me sad as an engineering student 🥺, it's not easy to find such high quality videos, so I'd really appreciate it and give my support if you'd be willing to do videos for engineers as well 🙏
That was a very nice explanation, thanks for that, but I still have one doubt: where would the saturated region be? Please explain that where and why should the saturated region be?
Sir, at 02:11 You mentioned that regardless of the value of the Output Voltage, the Output Current is almost the same. But we've seen that the Base - Collector Junction is getting reverse biased. And in a reverse bias, the current is almost the same even if we increase the voltage. But there is a "Breakdown Voltage", right. So what happens if the Output voltage goes beyond the Breakdown Voltage? Will the engineers make sure that this scenario doesn't occur? Else everything will be wasted, right?
your doubt is obvious...but it is teacher's mistake...There is no reverse bias..because in npn comman emmiter transistor N and N connected as Emmiter and Collector in this case...
Since the base current is to be kept constant, if we increase the collector-emitter voltage the base current would decrease somewhat, so to keep it constant we would have to increase base-emitter voltage. Won't doing this forward bias the collector-base junction at some point?
I think it is because as the depletion region width between the Base(p type) and Collector(n type) decreases, the E-field force on electrons(which are in the Base)decreases as the depletion region between Base and Collector, while the diffusion force on electrons increases.
Excuse me sir, by equation when transistor become saturation legion Vce become smaller Ic become bigger. that why I so confuse by the grape when Vce become smaller then Ic become smaller too. so what is the misunderstanding... ?
When Ib was increased from 10 microAmp, then wouldn't more electrons from Emitter go out through base, and cause less electron to flow from emitter to collector, causing Ic to lessen?
in 4.0 to 5.0 in the video, u said as vce decreases below 0.7 it comes to forward bias. the grapgj showa ic is zeor at a point. in another video u mentioned this is the saturation region n ic is maximum. in cut off its zero. how in saturation region the ic has become zero in the graph ?
Its because the number of electrons is constant so no matter how much voltage you put the current remains the same. Actually, a lot of details are hidden in beta, if you ever do major in electronics you can really make sense out of it.
Hello Mahesh Sir I have a question...... why does the input characteristics graph does not have current plotted in the negative y-Axis ?? because here we can see that the direction of current is in the wire connecting the emitter and the base is from low potential i.e. from the emitter to the high potential i.e. to the base
in a previous video when base current was more than 30 micro amp the output current was not changing and that was the saturation region,how in this case the output current is decreasing.
Sir , why the electrons in the N region of the collector do not play any rule when the collector base junction is reverse biased , you said that at 4.47. Shouldnot electrons of the collector contribute to the current ?
but isnt the Ic is beta times Ib then if Ib becomes 2 times that is from 10 to 20 then Ic should become beta times right... But u said that it also becomes 2 times... hows that possible??
So Ic is Beta times Ib correct. However when Ib doubles, even Ic will double right? Let's take an example. Suppose Beta is 100. If Ib is 1 then ic is 100 Now let's double Ib i.e. 2 then ic becomes 200. Look ic has doubled. If Ib becomes 5 times more i.e. 5 ic becomes 500 which is again 5 times increase (notice it's 5 times what ic was before, but ic will always be 100 times ib) Let me know if you need more clarity :)
I think it is because as the depletion region width between the Base(p type) and Collector(n type) decreases, the E-field force on electrons(which are in the Base)decreases as the depletion region between Base and Collector, while the diffusion force on electrons increases.
Hey, here's a dedicated CBSE course on our website where you can practice all the concepts related to this video and more. And oh, it's always free.
www.khanacademy.org/science/in-in-class-12th-physics-india/in-in-semiconductors
The explanation is mind blowing
I was living with a doubt for 5 long years then tonight I watched this video. Thank you so much 💜👍
Real student spotted ...
This video is amazing but ' these are only in the engineering domains we don't have to worry about them at all ' kinda makes me sad as an engineering student 🥺, it's not easy to find such high quality videos, so I'd really appreciate it and give my support if you'd be willing to do videos for engineers as well 🙏
Undoubtely best explanation present on you tube thanks
This answered some ambiguity that my textbook (Floyd) caused. Thank you!
Thanks Khan academy for such a wonderful playlist
Ah! Sir, thanks from the depth of my heart! I finally understood it nicely.
Thankyou sir 🙏🏻 it is very helpful to us
Good explanations, thank you!
Very nicely explained...my concepts on this are cleared.
Thankyou so much
That was a very nice explanation, thanks for that, but I still have one doubt: where would the saturated region be?
Please explain that where and why should the saturated region be?
Wowwww the man is absolutel genius!!!!!
Sir, at 02:11
You mentioned that regardless of the value of the Output Voltage, the Output Current is almost the same. But we've seen that the Base - Collector Junction is getting reverse biased. And in a reverse bias, the current is almost the same even if we increase the voltage. But there is a "Breakdown Voltage", right. So what happens if the Output voltage goes beyond the Breakdown Voltage? Will the engineers make sure that this scenario doesn't occur? Else everything will be wasted, right?
your doubt is obvious...but it is teacher's mistake...There is no reverse bias..because in npn comman emmiter transistor N and N connected as Emmiter and Collector in this case...
I wish my lecturer can explain like this...
Shouldnt the curves go slightly upwards to the right considering youre using a common emitter configuration not a common base configuration?
thank u soo much for providing the reason behind such curve fashion. Searched many videos all provided only formulas not the concept.👍👍
Since the base current is to be kept constant, if we increase the collector-emitter voltage the base current would decrease somewhat, so to keep it constant we would have to increase base-emitter voltage. Won't doing this forward bias the collector-base junction at some point?
Hats off, very good explanation,
Very very helpful. Keep it up
Crystal clear explanation ❤️
why does the flow of electrons become harder when the depletion region decreases?
I also have a same question in 4:32
I think it is because as the depletion region width between the Base(p type) and Collector(n type) decreases, the E-field force on electrons(which are in the Base)decreases as the depletion region between Base and Collector, while the diffusion force on electrons increases.
so nice
Wow. It's a great explanation. thank you.
What happens when Vce gets equal to Vbe , shouldn't the current IC drops to zero ? As collector base junction would be zero biased ?
Excuse me sir, by equation when transistor become saturation legion Vce become smaller Ic become bigger. that why I so confuse by the grape when Vce become smaller then Ic become smaller too. so what is the misunderstanding... ?
Brilliant brilliant brilliant
Thank you so much...it was such a great explaination.
You are just fabulous 😍
Highly informative!! Thanks sir!...
When Ib was increased from 10 microAmp, then wouldn't more electrons from Emitter go out through base, and cause less electron to flow from emitter to collector, causing Ic to lessen?
Good
Great explanation..
Sir why don't you cover engineering part as well😊
best explanation ever
that was very good sir!
At 5:03 will quantum tunneling of the electrons take place? Since the height of the barrier potential increases as width of depletion layer reduces
no
Well done man 💓💓💓👏👏👏
Excelent job! Thank u!!
Thank you sir...Thanku so much
Thankyou so much...I finally understood it
Excellent explanation
Best explanation
wow, thank you ~~ easy to understand
in 4.0 to 5.0 in the video, u said as vce decreases below 0.7 it comes to forward bias. the grapgj showa ic is zeor at a point. in another video u mentioned this is the saturation region n ic is maximum. in cut off its zero. how in saturation region the ic has become zero in the graph ?
So Basically Ic is output current and Ib is input current....so this graph shows that ... when input I increases output Current decreases ?
Does the collector voltage have to be more positive than the base voltage? (For the transistor to conduct)
Thank you so much
Pls explain the the effect to depletion width on electron flow
Please someone explain why is graph of reverse breakdown like that i.e., constant current at different voltage ... Please help
Its because the number of electrons is constant so no matter how much voltage you put the current remains the same. Actually, a lot of details are hidden in beta, if you ever do major in electronics you can really make sense out of it.
Nice video.
Is there a mistake in explanation when the Vce was reduced to 0.3 v ?
I am not sure. Please check.
Great explanation indeed !
The best
Excellent but do it for engineering students also please
Hello Mahesh Sir I have a question...... why does the input characteristics graph does not have current plotted in the negative y-Axis ?? because here we can see that the direction of current is in the wire connecting the emitter and the base is from low potential i.e. from the emitter to the high potential i.e. to the base
Thanks a lot this helped a lot! : )
Thanx sir
With videos like these, I don't understand why paid packages are a thing 🗿
in a previous video when base current was more than 30 micro amp the output current was not changing and that was the saturation region,how in this case the output current is decreasing.
This is a valid question. Mahesh Sir, please explain this.
Thank you sir😊
Sir , why the electrons in the N region of the collector do not play any rule when the collector base junction is reverse biased , you said that at 4.47. Shouldnot electrons of the collector contribute to the current ?
love u!!!!!!!!!!!!!!!!!!
Soooperr
Tq
Sir, can you make a video for engineering students too?
But I thought when Vce is 0v IC would be maximum as you taught in a previous class. Can someone explain plsss
Sabash
but isnt the Ic is beta times Ib
then if Ib becomes 2 times
that is from 10 to 20 then Ic should become beta times right...
But u said that it also becomes 2 times...
hows that possible??
So Ic is Beta times Ib correct.
However when Ib doubles, even Ic will double right?
Let's take an example.
Suppose Beta is 100.
If Ib is 1 then ic is 100
Now let's double Ib i.e. 2 then ic becomes 200. Look ic has doubled.
If Ib becomes 5 times more i.e. 5 ic becomes 500 which is again 5 times increase (notice it's 5 times what ic was before, but ic will always be 100 times ib)
Let me know if you need more clarity :)
please can someone explain me why the graph of ce and cb output characteristics are different ...
whether it's for common emitter characteristics
hello there >>> i work as a teaching assistant , and i would like to know the software used for presentation
What will bethe graph if Ib=0A
The pointer paints the screen .I can't see well
boss vid
Yesa doosra koi video aagar you tube hoga hindi me toa muzhe link share kijiye
IF DEPLETION REGION DECREASES , WHY IT IS HARDER FOR ELECTRONS TO SWEPT ACROSS? ANYONE
depletion region is gay
I think it is because as the depletion region width between the Base(p type) and Collector(n type) decreases, the E-field force on electrons(which are in the Base)decreases as the depletion region between Base and Collector, while the diffusion force on electrons increases.
4:33
Who knows what device is used to make this kind of video?
Admit of more clarification...2 nd class explanation...banal..nothing new...
I dont like your accent man. Be native or more likely to an american.. But what is this!
Yep... he is trying to fake his accent, try being original. It is much better.
So nice
best explanation
So nice