Wow.... Ur videos are really very much helpful.... they are so much informative and makes every concept very clear.... Every doubt i had is cleared now .....Thanks for such a good work :)
oh really if u understand 25th VDO i.e.diode under equilibrium , this VDO of BJT is just slight extension of that , but real credit goes to Techgurukala , the way he is linking the things , thanks TECHGURUKALA
Hi Dheeraj, I still say Ne >> Nb & Nb > Nc is correct. Ne >> Nb to make Emitter Injection efficiency high. Nb > Nc to avoid punch through. For confirmation check EC 2010 GATE question on BJT. Thanks, Techgurukula.
I am too confused , as in all textbooks it is mentioned that base is least doped while collector is moderately doped. But then depletion region length greater in collector side contradicts this. Please clear my confusion.
really u r awesome sir ...by listening ur class I present my lecture in the same manner sir ..I really got appreciated by my madam and frnds thank u teachgurukala.......
Sir can you please tell me why are you drawing approximate curve of electric field when you are using poison equation? Since poison equation is used to find the exact value of electric field and the exact curve is not triangular.
Sir,,in many books it is mentioned as doping sequence from high to low as Emitter > Collector > Base. But in video it is mentoned Emttor >Base> Collector. Which is correct??
Hi Asmaul, This is based on my understanding from various sources like M.Tech + interpretation + teaching experience. In fact, I'm writing a text book - in even more detailed fashion with simplicity. Unfortunately, not one/multiple text book has all the data in required fashion. First reason for me to put videos. Please do checkout the MOS Capacitor Videos, and MOSFET videos will be coming soon.
great lecture. each and every second of those 12:23 minute was worth listening.
Wow.... Ur videos are really very much helpful.... they are so much informative and makes every concept very clear.... Every doubt i had is cleared now .....Thanks for such a good work :)
oh really if u understand 25th VDO i.e.diode under equilibrium , this VDO of BJT is just slight extension of that , but real credit goes to Techgurukala , the way he is linking the things , thanks TECHGURUKALA
Superb lectures sir..thankyou so much ☺
sir your videos are awesome....but their some mistake....Sir Base is lightly doped and doping concentration will be like this Ne > Nc > Nb
Hi Dheeraj, I still say Ne >> Nb & Nb > Nc is correct.
Ne >> Nb to make Emitter Injection efficiency high. Nb > Nc to avoid punch through.
For confirmation check EC 2010 GATE question on BJT.
Thanks, Techgurukula.
Sir ...then what is early effect???.....in early effect depletion width is more and more in base region...as we reverse bias the collector junction
may be sir question has some mistake.....
I am too confused , as in all textbooks it is mentioned that base is least doped while collector is moderately doped. But then depletion region length greater in collector side contradicts this. Please clear my confusion.
@@nilimakumari3831 no base is more doped than collector
have you taught skotty diode in this lecture series
thank you for your great tutorial but i have seen in another video they said base is lightly dopped and collector is moderately dopped?how come?
yes same doubt.
really u r awesome sir ...by listening ur class I present my lecture in the same manner sir ..I really got appreciated by my madam and frnds thank u teachgurukala.......
saggurthi prasanthi
Thank you Prasanthi for letting me know your experience.
I'm happy to have helped you this way :).
Thanks,
Techgurukula.
Sir can you please tell me why are you drawing approximate curve of electric field when you are using poison equation?
Since poison equation is used to find the exact value of electric field and the exact curve is not triangular.
Sir,,in many books it is mentioned as doping sequence from high to low as Emitter > Collector > Base. But in video it is mentoned Emttor >Base> Collector. Which is correct??
Sir, while representing built in potential at emitter side it should be -ve na ?? as Vp=-e*Na*(Wp)*(Wp)/2ε from diode built in potential derivation
you saved my life
thanks a lot sir ,,sir plz upload remaining topic for gate,,,,...
Which textbook do you follow?
Hi Asmaul,
This is based on my understanding from various sources like M.Tech + interpretation + teaching experience. In fact, I'm writing a text book - in even more detailed fashion with simplicity.
Unfortunately, not one/multiple text book has all the data in required fashion. First reason for me to put videos.
Please do checkout the MOS Capacitor Videos, and MOSFET videos will be coming soon.
@@techgurukula need more detail explanation of BJT as I have a test next week. Can you recommend me some easy to understand textbooks?
@@asmaulhusnashampa2299 I don't have any references for BJT. Sorry.
@@techgurukula sir whats name of your text book ?
how to reach you?
sorry for a very late reply: reach me over techgurukula@gmail.com
@@techgurukula Sir I mail you but didn't respond yet.. plz reply
Umm...why dont you extend the BJT video collection as well techgurukula ? It would go a long way in helping students out! Otherwise great job!
very much helpful