why does depletion width decreases in forward bias? i feel like it should increase my explanation : As there will be reduction in electric field in depletion region due to forward biasing, J(drift) decrease where as J(diffusion) remains same as unbiased,now as J(drift) is less than J(diffusion) holes flow towards right and more negative charge forms on p side till J(drift)=J(diffusion) and depletion width increases.
Hello sir.your lectures are superb..the generation current in reverse bias at neutral regions,will it be supplied by external battery??The recombination current in forword bias at neutral regions,will it be supplied by external battery??
VT = KT/q. Vbi = (KT/q) ln(NdNa/ni2) = VT ln(NdNa/ni2). VT is called Thermal voltage (units: Volts), as it depends only on temperature. K and q are constants.KT units is electronVolts (eV).
Hi, great videos! I have a question though. I know that HPGe detectors, which are diodes operating with voltage in the reverse mode have to be cooled to 77K to stop the drift current. Why is this the case, reflecting back to your explanation? Perhaps the Vbi is very small, and electron can climb the barrier at the contact?
As temperature decreases the oscillations of charge carriers decreases, so the chance of getting the carriers into the depletion region decreases.So drift current reduces.As temperature decreases vbi increases, because it depends on ni2 which is more dominant than T term.
Hi, firstly thank you for this video. I have one question. when we do not apply external voltage to the diode, does drift current occur? or? I know that drift current depends on an electric field. in an abrupt pn junction, there is an electric filed too, but Can this electric field cause drift current to be present?
Hi, under the new gate 2021 syllabus ic fabrication process was removed.. Can you please tell what topics come under the ic fabrication so that we could skip them?
Thank you so much. You have my utmost support. God bless !!!
Okay this video is 1000000 times better than the one I just watched. Very good teaching sir.
Awesome explanation and absolutely brilliant! Thank you keep this up!
very nice lectures... cleared many concepts
thanks a lot.awesome vedio.You have amazing concept about the subject that only few really knows.
Thank you so much ! Clear and short !
This video really helped me
Why the applied potential appears completely across only depletion region why not in neutral region ???
I like how you dont ask for subscription because we would do anyway..Thanks and can you please make more videos on heterojunctions
This is insane teaching!! Completly blown by the concepts and the ease with which you explain.
I want to contact you how can I?
oh boy! I missed your comment. You can reach me at techgurukula@gmail.com
thank u sm sir!!1111 u saved my life!!!11
excellent
why does depletion width decreases in forward bias? i feel like it should increase
my explanation : As there will be reduction in electric field in depletion region due to forward biasing, J(drift) decrease where as J(diffusion) remains same as unbiased,now as J(drift) is less than J(diffusion) holes flow towards right and more negative charge forms on p side till J(drift)=J(diffusion) and depletion width increases.
drift current through a PN junction independent of applied bias voltage,can you explain these??
you said in the lecture the drift current decreases!!!
Hello sir.your lectures are superb..the generation current in reverse bias at neutral regions,will it be supplied by external battery??The recombination current in forword bias at neutral regions,will it be supplied by external battery??
Dankeschön, Sehr Geehrte Mann.
Very well explained.
Awesome stuff, only thing I cant understand out of everything is why Ei, disappears in the Fermi level video :/
vbi= KTln(NDNA/NI^2) RIGHT? cant seem to understand what VT is...
VT = KT/q. Vbi = (KT/q) ln(NdNa/ni2) = VT ln(NdNa/ni2). VT is called Thermal voltage (units: Volts), as it depends only on temperature. K and q are constants.KT units is electronVolts (eV).
Hi, great videos! I have a question though. I know that HPGe detectors, which are diodes operating with voltage in the reverse mode have to be cooled to 77K to stop the drift current. Why is this the case, reflecting back to your explanation? Perhaps the Vbi is very small, and electron can climb the barrier at the contact?
As temperature decreases the oscillations of charge carriers decreases, so the chance of getting the carriers into the depletion region decreases.So drift current reduces.As temperature decreases vbi increases, because it depends on ni2 which is more dominant than T term.
Hi, firstly thank you for this video. I have one question. when we do not apply external voltage to the diode, does drift current occur? or? I know that drift current depends on an electric field. in an abrupt pn junction, there is an electric filed too, but Can this electric field cause drift current to be present?
Hi, under the new gate 2021 syllabus ic fabrication process was removed.. Can you please tell what topics come under the ic fabrication so that we could skip them?
Hi,
In this playlist, I have not included any IC fabrication videos. So, nothing to worry on skipping.
Thanks,
Techgurukula.
Dear sir,
Thank you for your videos. Could you please tell me which software are you using for this presentation?
+Qamar wali yes i would like to know too'
But I don't know too dear. Actually no one replied me.
+Qamar wali +yashfernandojain
Hi guys,
we use "smoothdraw" software and "Wacom Bamboo Pen" Hardware piece for Writing.
Screen recording software: "camtasia"
Audio recording: simple headset.
Thanks,
Techgurukula.
thank you, great lecture!
Best 💯
Bro you are from which state
how do you know which direction the drift and diffusion go for holes and electrons?