POINT TO NOTE: A p type semiconductor is not positively charged instead the number the protons and electrons are equal in its lattice.its actually called p-type semiconductor because there is free movement of holes (i.e- positive charge carriers). the same goes for n type semiconductor.. :)
@@Winsler05 holes in the lattice points are defects. That means, simply the absence of electrons in valence band are known as holes. And holes do not move practically. These vacant spaces are filled by another electron creating a hole on its place and so on. This causes the shift of holes. This is known as hole current.
The depletion is formed by positive and negatively charged ions... you cant represent the majority charge carriers on both sides with the depletion region with same notation... And when FB is applied " it shrinks".. Please try to use some technical terms.
@@bhavna3962 Lmaoo I wanted to drop an ATB to her, then saw that the comment is 6y old. Yup, his/her life would have changed now. Thought the same. Vibee check. ATB to u instead✨
@@bhavna3962 yeah😅 I was also thinking the same this comment is 6 yrs ago and at this point how different their life will be as compared to 6 yrs ago! Anyways, Time tickles😄 Physics never changes. ATB :)
this video does not explain the reason for the electric field developing across the junction and avalanche breakdown. The p type impurity atoms have only 3 electrons around them and n type impurity atoms have 5 electrons. When a PN junction is made, the excess electrons from the n region moves to the holes(vacant position for electrons) present around the P type impurity atoms. Thus when n region looses one electron, N type impurity atoms becomes positive ions and when the N type impurities accept this electron, they will become negative ions .This creates potential difference across the pn junction. The avalanche break down occurs due to the minority carriers present in both regions. When high reverse voltage is applied, the minority charges gain enough energy to break the depletion region causing uncontrollable current flow through the junction.
get ur basics correct sir p type is not positively charged the same goes for n type it is not negatively charged , they both are electrically neutral in nature
@@stevehamilton5704 yeah in reverse bias the positive holes don't migrate from the p-region to the n-region ,it's infact the highly energetic electrons who are the minority carriers that moves from the p-region to the n-region right?
Thanku so much sir.... Tomorrow is my exam of electronics n was confused 😖 in pn junction... In 14 min I understood the pn junction... Thank u god bless
u nailed it.... thnx a lot 4 clearing a lot of confusions that was in my mind from last one month.... i m a student of cls 12..nd thnx 4 saving my time...
Just Awesome. Very clear and neat explaination. Thank you very much sir. Keep up your good work. Pls make more videos about the Power Electronis subject. Becoz, There are whole lot of complex topics in PE that needed to be explained in this Simple manner. Hats off to you sir. You're work is just priceless. God bless you :)
+Vamshi Krishna We are honored by that comment. For more info you can email us at techtrixinfo@gmail.com or whats app at +919744615655 TechTrixInfo.com
Diffusion current is the movement of the holes from p side to n side and due to the movement of electrons from n side to p side.The movement of the electrons from p side to n side and and holes from n side to p side after the formation of space charge region is called DRIFT current.
Hi, I appreciate the positive attitude but when it comes to accurate science I think you could really improve. 3 significant mistakes. 1. The space charged region is formed due to depletion of mobile charges (because of recombination), meaning the electric field is only due to the stationary ionized atoms, not free holes and electrons. 2. The current in forward bias is diffusion current of majority carriers and not drift current. 3. The current in reverse bias is drift current of minority carriers. Pini.
Hey! I've got a question. Why don't the electrons just jump from the n-type to p-type? Also if al the electrons go to the other side, it would remain balanced and then no flow would happen
@@silje0568 1.electrons from n type cannot directly move to p type because of junction resistance. 2. If all the electrons move to the other side they will create a hole in their original postion. So when they move on the other side they will be again attracted towards the hole so a flow will occur continuously.
Great job! This is one of the few available on UA-cam correct (and simple at that) explanations without dragging in the unnecessary concept of "potential voltage barrier" and using more simple idea of "insulating depleted area", and correctly calling a current the "drift" current rather then "diffusion" current (as it was in the video "JBtEckh3L9Q", for example). But, I believe you messed up with the arrows at the end of this video (starting from 5:33) where you talked about avalanche breakdown. By the way, this is how a stabilitron/stabistor works.
Just a quick note: You indicate the direction of current (holes and electrons) incorrectly during the avalanche breakdown description at 5:30. Flip both those directions and you are solid.
+Captain Rhodes yup. just put it in the limiting cases. when there is almost no space-charge region in forward bias: thus the electric field is almost non-existent, and all current is diffusion current. When depletion region is too big, consuming almost the whole thing, then the E field is too large and the dominating current is drift current. At least that's how i remember it D;
Depletion region doesn't include any free mobile carriers. There is just ionized dopants. So you are wrong about the depletion region having electrons and holes.
Extremely wrong to say that P and N typed are "joined" together. Instead, a semiconductor material e.g Si is doped with P-type impurity e.g Boron at one end and with N-type impurity e.g Phosphorous from other and. After the diffusion, a junction is naturally formed somewhere in between both the ends of the Si material. Location of the junction and width of depletion region depend on the concentration difference of both the impurities.
sir i couldn't understand the fact that why the width of depletion layer is reduced in forward bias even when the holes and electrons are being repelled by the baterry and forced to move on the other side?
Hi every body . At time 4:12 of this video , the text under the animation , is wrong while this is not the definiton of reverse biasing . The correct text is : Battery is connected with negative terminal to P region and positive terminal to N region . Thanks.
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So let me get this straight. When you connect the Negative terminal of the battery to the P-junction and the Positive side of the battery to the N-junction electrons will fill in the holes in the P-type because they are attracted to the P-type. The incoming electrons cause the electrons in the N-type to be repelled and flow into the Positive terminal on the battery, which they are also attracted to.
I appreciate the effort of the person behind this video but basics are not actually taught/stated right. If you guys seriously want to clear this basic concept then I would really suggest to give Sedra Smith "Introduction to Electronics and Semiconductors" chapter a good read.
The video has some nice explanation but theres ambiguity about how the electric field was created and the avalanche breakdown like some other people have mentioned here in the comment section. Its good people have pointed it out, because although it's a good educational video for beginners to grasp the "general" idea, technically it must be more precise in explaining to really illustrate what is really going on. Anyhow, good work to both the maker of the vid and ppl pointing out some crucial facts/mistakes.
Thanks for explaining it too simple Sir, I thought it was something difficult when my lecture introduced it to me... you explained it the way I wanted to learn
Best video to understand in few minutes, when u are left with one day to exam😂...
Dude🤣😆
Hahahaha 🤣😂😂😂
😒😒😒😒
Turu
Exam is in few hours
2hrs 😂😂
POINT TO NOTE:
A p type semiconductor is not positively charged instead the number the protons and electrons are equal in its lattice.its actually called p-type semiconductor because there is free movement of holes (i.e- positive charge carriers). the same goes for n type semiconductor.. :)
is it neutral ? Are holes act like proton except that it can move ? Sorry if my question is stupid . . .
johome10 A p type or n type semiconductor is neutral.the no of protons and electrons are same in the lattice
Could you explain why it is called as holes, how holes can travel?. Protons and electrons can move bcz its physically particles..
@@Winsler05 holes in the lattice points are defects. That means, simply the absence of electrons in valence band are known as holes. And holes do not move practically. These vacant spaces are filled by another electron creating a hole on its place and so on. This causes the shift of holes. This is known as hole current.
Nice bro
Hey, thank you. Im from malaysia. The video really helped me understand the semiconductor diodes better. Thank you once again!!!!!
Thanks for your comment
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nce thx i understood it
The depletion is formed by positive and negatively charged ions... you cant represent the majority charge carriers on both sides with the depletion region with same notation... And when FB is applied " it shrinks".. Please try to use some technical terms.
Vijay Ramya why u watching the video?
Smiler Liverpool Why did they upload?
Vijay Ramya To teach not to be taught
Thaaaaaaank you! My exam is in the morning (it's 22:35 at night) and my lecture notes were a mess for this but this cleared things up haha
its so weird to think that this comment is 6 years old and ur life is probably completely different now (hope ur doing well!)
@@bhavna3962 Lmaoo I wanted to drop an ATB to her, then saw that the comment is 6y old. Yup, his/her life would have changed now. Thought the same. Vibee check. ATB to u instead✨
@@shreya-ej4nh thank u ! all the best for physics to u!
@@bhavna3962 yeah😅 I was also thinking the same this comment is 6 yrs ago and at this point how different their life will be as compared to 6 yrs ago!
Anyways, Time tickles😄 Physics never changes. ATB :)
Hi
Very helpful... Ith kandapo aan vyakthamaai mnsilaayath.. Thanku sir
this video does not explain the reason for the electric field developing across the junction and avalanche breakdown.
The p type impurity atoms have only 3 electrons around them and n type impurity atoms have 5 electrons. When a PN junction is made, the excess electrons from the n region moves to the holes(vacant position for electrons) present around the P type impurity atoms. Thus when n region looses one electron, N type impurity atoms becomes positive ions and when the N type impurities accept this electron, they will become negative ions .This creates potential difference across the pn junction.
The avalanche break down occurs due to the minority carriers present in both regions. When high reverse voltage is applied, the minority charges gain enough energy to break the depletion region causing uncontrollable current flow through the junction.
+bijesh balan Well said..
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+bijesh balan thanku for explaining the fact sir.
+bijesh balan thanks to you sir!
+bijesh balan This was great
c
Cleared obscure points for me .A Thank You from Brazil.
get ur basics correct sir p type is not positively charged the same goes for n type it is not negatively charged , they both are electrically neutral in nature
yeah u re right! i found so many things that he explained were incorrect. esp. while explaining reverse bias operation.
@@stevehamilton5704 yeah in reverse bias the positive holes don't migrate from the p-region to the n-region ,it's infact the highly energetic electrons who are the minority carriers that moves from the p-region to the n-region right?
Yah u r right cuz ... i will also thinking this ... even i heard video 3 4 times forreverse baising concept
Thanku so much sir.... Tomorrow is my exam of electronics n was confused 😖 in pn junction... In 14 min I understood the pn junction... Thank u god bless
Maybe you should try on a rap career. From P to tha N and back to N to tha P.
its more clear when there is an animation.. professor in class should do this than showing only photos, thanks a lot!!
Nicely explained
I got clear cut idea from this video.
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Ya really I am watching before the Exam to understand it properly .
Now I understood all after watching this video 🙏.
it made me understand much as I needed
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u nailed it.... thnx a lot 4 clearing a lot of confusions that was in my mind from last one month.... i m a student of cls 12..nd thnx 4 saving my time...
Raunak Singha Thank you , please subscribe to us for more videos n keep connected with us on Facebook just search for Techtrixinfo
Thank you sooooooooooooooo much😊😊😊. It was so difficult for me to understand this bias
The best video on this topic is here
Thank you
The basic of semiconductor physics is covered within 7 minutes. Nice job sir!
Thanks to you sir ,better than MIT online courses .
Just Awesome. Very clear and neat explaination. Thank you very much sir. Keep up your good work. Pls make more videos about the Power Electronis subject. Becoz, There are whole lot of complex topics in PE that needed to be explained in this Simple manner. Hats off to you sir. You're work is just priceless. God bless you :)
+Vamshi Krishna
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No words to explain you are just number one!
Thanks for the comment.
Just in time for my material science final this week. Very informative, and clear as ice. Thanks.
this is the only video dat can help me understand that how BJT works on youtube ,thanks!
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Umm...it's not a bjt....it's a pn junction diode....bjt is much more complex... :)
Kwunhei Ching woah thats just convincing. .lol
Diffusion current is the movement of the holes from p side to n side and due to the movement of electrons from n side to p side.The movement of the electrons from p side to n side and and holes from n side to p side after the formation of space charge region is called DRIFT current.
Then in the video is it wrong ????
seriously the topics described in the above video are too nicely explained ....
in space charge region immobile ions are formed unlike u said electrons and holes @02.02
thankyou
This short video covered all topics so well....very nicely explained sir...thanks a lot...😇😇😇😇😇😇😇😇😇😇😇😇😇😇😇
Holes doesn't move actually what happen is electrons move leaving a hole (creating a hole)
Yasinda Perera
That's what I want to hear.
Yes yes finally! Why can't the textbooks just mention that!? I hate this confusion. When I explained it to my friends, they just said I was wrong.
Very nice explanation i can never forget it now till i am alive thanks very much
EXCELLENT ........WE ARE EXPECTING MORE VIDEOS FROM YOU SIR
+Hyder Ali Shaik
Sure
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excellent excellent excellent. Worth 6min of my life💜
+Himanshu Doley
Thanks for the comment
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Thank you so much! Clearly explained and easy to follow, especially with the animations.
i learned in this video more than what i have learned in 3 years at my university >
thank you so mach
This was very helpful. Thank you so much.
+Tanya Gupta
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Thanks! Finally an explanation of drift current that I can understand
hello. Very short and sharp very well down . Could you guys go a video on integrated circuit (IC)
many times better then our guides
Hi, I appreciate the positive attitude but when it comes to accurate science I think you could really improve.
3 significant mistakes.
1. The space charged region is formed due to depletion of mobile charges (because of recombination), meaning the electric field is only due to the stationary ionized atoms, not free holes and electrons.
2. The current in forward bias is diffusion current of majority carriers and not drift current.
3. The current in reverse bias is drift current of minority carriers.
Pini.
yes there were mistakes, but gives some ground on this topic.
Even the direction of electric field
Precisely!
Hey! I've got a question. Why don't the electrons just jump from the n-type to p-type? Also if al the electrons go to the other side, it would remain balanced and then no flow would happen
@@silje0568 1.electrons from n type cannot directly move to p type because of junction resistance.
2. If all the electrons move to the other side they will create a hole in their original postion. So when they move on the other side they will be again attracted towards the hole so a flow will occur continuously.
I like this south Indian sir. Apne wali feeling ⚡❤️
Great job! This is one of the few available on UA-cam correct (and simple at that) explanations without dragging in the unnecessary concept of "potential voltage barrier" and using more simple idea of "insulating depleted area", and correctly calling a current the "drift" current rather then "diffusion" current (as it was in the video "JBtEckh3L9Q", for example).
But, I believe you messed up with the arrows at the end of this video (starting from 5:33) where you talked about avalanche breakdown. By the way, this is how a stabilitron/stabistor works.
It was a nice video though!!Between its the opposite...P type semiconductors are negatively charged,and N type are positively charged
Just a quick note: You indicate the direction of current (holes and electrons) incorrectly during the avalanche breakdown description at 5:30. Flip both those directions and you are solid.
Exactly. The electrons are being pushed from the negative pole through the p-SC to the n-SC.
thalaivvah .. rumba rumba nadri thalaivvah .. aiyooo intha topic konjam lite ah confuse agitte irrunthuchu .. unga video podu vera level ...
Thank you sir...!!! I got it completely :)
hii
7350937175
Wow! Speechless
Very useful sir. Thankyou!
Very Useful
No careful! the current that flows in forward bias is the diffusion current!
Yeah i too noticed that he said drift current
+Captain Rhodes yup. just put it in the limiting cases. when there is almost no space-charge region in forward bias: thus the electric field is almost non-existent, and all current is diffusion current.
When depletion region is too big, consuming almost the whole thing, then the E field is too large and the dominating current is drift current.
At least that's how i remember it D;
Captain Rhodes yup bro i noticed it too
Captain Rhodes yup bro i noticed it too
Yeah you are right
Super its clear my doubts
Great Explanation
Depletion region doesn't include any free mobile carriers. There is just ionized dopants. So you are wrong about the depletion region having electrons and holes.
+Mustafa Atahan NUHOĞLU Thanks for pointing that out. Simpletons are thanking for the video even after it is fundamentally incorrect.
Actually it has electrons and holes but they are immobile
it is very clear and able 2 understand at the 1st time nly......
thanks for your work!
this makes my day
good and correct explanation then other channels
Extremely wrong to say that P and N typed are "joined" together. Instead, a semiconductor material e.g Si is doped with P-type impurity e.g Boron at one end and with N-type impurity e.g Phosphorous from other and. After the diffusion, a junction is naturally formed somewhere in between both the ends of the Si material. Location of the junction and width of depletion region depend on the concentration difference of both the impurities.
Absolutely Right Bro
Thank you so much . Your video relieved me of all the confusions I had.
Thanks for the comment
sir i couldn't understand the fact that why the width of depletion layer is reduced in forward bias even when the holes and electrons are being repelled by the baterry and forced to move on the other side?
Neither do I!
+Joyce Ye check + to - and - to + current flow you are confusing in it I think
it was great, thank you.
Hi every body .
At time 4:12 of this video , the text under the animation , is wrong while this is not the definiton of reverse biasing . The correct text is : Battery is connected with negative terminal to P region and positive terminal to N region . Thanks.
Thanks for an explanation
Thanks Sir
I love your accent!! lol. this helped a lot! thx :)
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*facepalm*
Nice video and easy to understand
Great Work
Diagram are wrong and first line itself is wrong
i was also confused by it
yes this is very wrong with respects to what happens in forward bias and reverse bias
needs to get ur facts straight man
thank you verymuch for make this explanation very clear. i hope i can get high score for answering this question in my final exam 2 week from now :D
thanks
One of the best video ever since it has clear explanation of the pn junction. Thanku very much
Very poorly explained!! I am sorry to say.
+Mohammad Ali Shakir
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Very good explanation. I would not be able to understand it so clearly without seeing it.
This literally give best formation explanation 👍👍
Finally someone tells the whole story. Thanks for the recap
So let me get this straight. When you connect the Negative terminal of the battery to the P-junction and the Positive side of the battery to the N-junction electrons will fill in the holes in the P-type because they are attracted to the P-type. The incoming electrons cause the electrons in the N-type to be repelled and flow into the Positive terminal on the battery, which they are also attracted to.
I appreciate the effort of the person behind this video but basics are not actually taught/stated right. If you guys seriously want to clear this basic concept then I would really suggest to give Sedra Smith "Introduction to Electronics and Semiconductors" chapter a good read.
Good explanation,precise and crystal clear
expect more videos
Thank you, I will 😊
Thank you for the explaination..it cleared my concepts very much..👍
Thanks for the comment
this is just great. it solved my only confusion in semiconductor
The video has some nice explanation but theres ambiguity about how the electric field was created and the avalanche breakdown like some other people have mentioned here in the comment section. Its good people have pointed it out, because although it's a good educational video for beginners to grasp the "general" idea, technically it must be more precise in explaining to really illustrate what is really going on. Anyhow, good work to both the maker of the vid and ppl pointing out some crucial facts/mistakes.
ende mone ejjadi sadanam
i under stood every thing
owesome video cleared all doubts.
oh man thank u! i have understood it in first time itself...great teaching
Best explanation ever.
BROTHER PLS EXPLAIN ZENER DIODE TOO.
YOU HAVE EXPLAINED IT IN SUCH AN EASY WAY THAT MY CONCEPTS HAVE BEEN CLEARED. PLS EXPLAIN THE ZENER DIODE TOO
I swear indians in YT is a better teacher than some actual teacher.
Thanks for the comment
Crisp and clear explanation..
Love and encouragement from Germany 🇩🇪🇩🇪
Tq frm canada
Thanks a lot sir you have solved my problem
u r a genius at the end of the ara(standard)
Thanks for the comment buddy. Please share with your friends.
Thnk u sir....simply explained and vry helpfull to undrstnd thz topic
It was too good and simple to understand.....GOOD JOB
+Surya Yadav
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Really Great explanation 👌. I don't think I need book reading
Thanks for explaining it too simple Sir, I thought it was something difficult when my lecture introduced it to me... you explained it the way I wanted to learn
omg
u made it so simple
thankyou
Damn awesome explanation. Better than what I understood from ncert
Thank you !!!
Thanks a lot got hold of the topic in few minutes
WELL U EXPLAINED IT AWESOME & better than my teacher, thank you
Thanks sir ...it has cleared all of my doubts
Very helpful. Thank you very much
Superb explanations ♥️
Thank you so much brother. Best way understood everything
Thanks for the comment
In forward bias , diffusion is taking place from p->n side (holes) and n->p (electron) while in reverse bias it is drift
Thanksadaaa mwutheee
thankz bro you just help me in exam