Power Gating and Mother/Daughter cells in VLSI

Поділитися
Вставка
  • Опубліковано 5 лют 2025

КОМЕНТАРІ • 11

  • @merrygo7189
    @merrygo7189 3 роки тому +1

    I shared your video ...hope you will get more subscriber.....

  • @charyvadla4486
    @charyvadla4486 3 роки тому +1

    Thanks a lot

  • @someshch5620
    @someshch5620 Рік тому

    Thank you

  • @merrygo7189
    @merrygo7189 3 роки тому +1

    Thanks 👍 a lot..

  • @AnimeshVaishees
    @AnimeshVaishees 3 роки тому +6

    short circuit power doesn't come under static power leakage

    • @AhmedCr
      @AhmedCr 3 роки тому

      I agree, short circuit is part of dynamic not leakage power

  • @himansh1308
    @himansh1308 3 роки тому

    Sir, how to decide the number of power switch in header/footer??

  • @CADDD_ACADEMY
    @CADDD_ACADEMY 2 роки тому +1

    Bro PMOS is slower than NMOS. PMOS has higher delay compared to NMOS! If aspects ratio (W/L) is constant

  • @hahtesham11
    @hahtesham11 2 роки тому +1

    PMOS is slower device than NMOS considering same W/L .because holes have less mobility than electrons. NMOS has faster discharging .