Відео

the lecture would go a lot faster if he wouldn't pause waiting for the students to answer his questions.

I have never liked letter "p" to indicate Derivative , I rather have a fancy capital D, like ₯ or Ɗ

Can I ask something? Why do we pretend like we're supposed to get this? We start off to begin with, simplifying every device into a 1 dimentional entity. Thats not realisitic at all. Whats the point of doing all this math if the real world isnt 1D? All the oversimplifications lead me to kind of turn off my thinking & not try to "think for myself", because whats really there to think about?

I started this course/playlist a couple years ago but stopped because I didn't know any calculus or physics II. Fast forward... after some courses at the community college... and this course is presented in a way that makes all of this feel quite intuitive (which I know it isn't because I needed prerequisites (like differential equations) in order to get this feeling). At the end of the day though... Great course!!

Fantastic lecture series

Thank you so much for putting these up online <3

I enjoy your lecture videos, but I don't think I can survive your courses. 😅

sir i have some doubt that how n-mos get turn on by applying -vin/2 voltage

Thank you for these lectures <3

36:30 why there will be two 4N energy bands?

Thanks 🙏👍💯😊

Blah blah blah

Nah man. This type of teaching will only work if you at least use a pointer and wrote on what you’re describing

Fantastic tutorial

How do we know we can use that small model for the BJT? I think that model corresponds to the forward-active region in the characteristics? Often I see were just assuming forward active operation. I get small-signal model, its kind of like linear taylor series approximations laid out in circuit form. But I dont get how we can assume the bias point is in forward active region, where that model is applicable. I guess it feels kind of right if V_cc is large, but still, I get scared/anxious/confused. Does anyone have a the video where he talks about this, with a timestamp? Not sure it will help, without seeing his other videos in proper sequence, but maybe idk. Im lost

Does deriving asymptotic transfer function methodology matter if it is positive or negative feedback circuit?

You are an unbelievably brilliant professor and a true inspiration!

Nice demo on correlated power @38:00 to end

24:53 here, V1 = Vsource [ R2 / (R1 + R2) ] ? This looks like the current formula right? With the value opposite the one you are solving for in the numerator? Whereas the voltage division has the value for the resistor you are solving for in the numerator? Or do you just always put the value opposite of the resistor that you are solving for? I thought V1 = [ R1 / (R1 + R2) ]

after 8 years, these classes are still alive :)

This is art. You are the best professor I can imagine. Thank you so much!

sir thank you for this valuable content love from india

What's the relationship of this theorem to EET? H_infinity looks quite like null double-injection and H_0 looks like a single-injection quantity. But I can't fully make the connection

I enjoyed this lecture, though something haunts me. With all this nulling of inputs and outputs, I was wondering if this can be extended to the Extra Element Theorem? Like would the EET be a 3-port network(or is that a 2 cascaded 2-ports?), using 2 nulls for each characteristic coefficient?

is this correction position of this lecture in current lecture series?

starting at 30:50 on wards, for the last solution of the system operator, aren't we missing /4 for both the fractions as a is 4 (and we're integrating exponents)?

25:50 - why is it called the "low freq. gain"?

Thanks 😄

For the impulse input, the circuit would become open instantaneously as the resistor would melt due to high current? Or resistors can handle instantaneous high values safely?

inverting amp's graph was a mistake? How come no one spotted it in the class

diamonds are small but NOT cheap

I have a question professor. There are some sources which say that the more accurate dependence of current with early voltage is (1+VCB/VA) rather than (1+VCE/VA). Apparently, this is even how spice models BJT transistors. Are you aware of this; is there an explanation for why the "true" correction factor uses VCB rather than VCE? This is a really niche detail that almost no one cares about, and so I can't seem to find an explanation anywhere

@11:30 diffusion current is due to concertation gradient.

It is just beautiful

Prof Hajimiri teaches with such details and flawlessness, makes it look so easy! and best videos ever.

Really great lectures with great energy. I understand the theorems better now. I'm viewing a week out from my circuits 1 midterm! I am approaching it with confidence thanks to you!

For an ideal control, I'd also suggest a gate within the channel in addition to all around the channel. Maybe (or for sure), someone has already though about it already. Is it physically realised or what's the latest advancement with regards to the ideal device design?

If depletion regions meet while making the channel shorter, then the built-in potential barrier would be higher due to higher built-in in E field opposing the flow of electrons from n to p side right?

If we're gonna substitute I_d for pinch-off, why do we only integrate from 0 to V_GS - V_T instead of 0 to V_DS?

what happens if there isn't the forth terminal (as in, the bulk is not connected to a negative voltage source)?

the E field due to V_SB aids holes to move away from the surface and electrons within the atoms to get to the surface right. Then how is it negatively affecting the device (as in, V_GS should accommodate the body effect as well)?

at around 45:00 - if BJTs are in saturation (both junctions in forward), the electrons need to recombine slowly in the base (slow process) - is what was stated. Question: But the electrons can flow out through the base right? We have 3 terminals

At around 07:00, it was mentioned that the back-to-back diode representation is not equivalent to a BJT due to the minority charge carries not reaching the collector and just recombining in the metal connection after the first diode. But the question is: Electrons are constantly injected into the emitter from the power source and charge conservation should imply that the electrons even if they recombine initially at the wire, they should eventually reach the collector and flow to complete the loop right?? I cannot just totally stagnate and be blocked right?

19:10 how is it "minus" here in Ψ_o - V_d in reverse bias?

the depletion region has E_f > E_i ?

41:37 "and that's called the Bode plot"! Thank you professor!

Is Ohm's law non-linear due to raising temperature during operation?

He is truly the Farther of Power Electronics!

Professors who can't explain things well make simple concepts seem way more complicated than they really are. It's so frustrating! You have my thanks for saving my academic semester.