Now in last year of BSc. Studying from you from class 11 sir. My basics are pretty better than my batch mates. I owe all this to you. You are God of Physics and a very kind soul. May you live long
The barrier potential for silicon with typical doping concentration is 0.7V. You could also change the barrier potential in simple ways. One would be to alter the doping concentration. Increasing the N side doping or P side doping or both would increase the barrier potential. Decreasing the doping concentrations would decrease the barrier potential. Alternatively for same concentration of doping you can have different barrier potential if you change the semiconductor material itself. Ex Si to Ge. Germanium has potential barrier 0.3. Much significantly lesser than silicon. Higher number of intrinsic carrier concentration decreases the barrier potential.
When same voltage occur ,potential Barrier get zero value means no opposition force is applied to cross the junction ,now electron get easily move towards hole side
Depletion layer starts to shrink because both potentials are equal. The condition for depletion layer to destroy or shrink and the for the electrons to flow, the applied voltage should be GREATER THAN OR EQUAL TO the barrier potential
What is a pn junction ? A pn junction allows current in one direction only. It blocks current in the reverse direction. When a pn junction is formed, a potential barrier designated Vo comes into existence and is typically around 0.6 to 0.7 volts for silicon junctions. When the barrier whose Vo is 0.7 volts is disturbed by applying a forward bias of say, 0.6 volts, the current increases and the increase becomes steep for small increments of the forward bias value a little greater than 0.68 volts. Large currents are observed when the forward bias is 0.69 volts which is closer to the barrier voltage of 0.7 volts. The forward bias can never exceed the potential barrier voltage nor can it bring the barrier down to zero volts. That is the reason you seldom see current vs volt graphs of pn junction diodes beyond a volt or so. How does the bias remain less than the barrier in an operational diode? The voltage bias applied drops in the bulk neutral regions of the diode. A detailed description of the pn junction with a distinct approach using surface charges, alignment of Fermi levels, creation of the barrier, the distinct processes of diffusion, drift, recombination and the influence of the electric field on the energies of electrons is provided in the following textbooks. Electrostatics and circuits belong to one science and not two, that of electricity and magnetism. To know how they are unified visit this link matterandinteractions.org/articles-talks/ and view the article 'A unified treatment of electrostatics and circuits. B. Sherwood and R. Chabay, unpublished. (1999)' pdf. For a live demonstration of surface charge and its effects in circuits visit ua-cam.com/video/U7RLg-691eQ/v-deo.html For a detailed discussion of surface charge, coulomb's law, electric fields, fields of dipoles and other charge configurations, parallel plates, capacitance, currents, conservation of charge, conservation of current, superposition of fields, superposition of potential, simple dc circuit, magnetic fields, magnetic fields of a current element, straight wire, current loop, solenoids, biot-savart law, voltage, voltage source, difference between e.m.f. and potential difference, ideal voltage sources, resistors, how current branches in a parallel circuit, capacitors, inductors, faraday's law, inductance, ac circuits, transmission lines, motors, generators, p-n junction diodes, electromagnetic waves, antennas and radiation, new electrodynamic theories on the nature of the electric field, see "Electric and Magnetic Interactions" by Chabay and Sherwood www.matterandinteractions.org or Fundamentals of electric theory and circuits by Sridhar Chitta www.wileyindia.com/fundamentals-of-electric-theory-and-circuits.html There is a "look inside" feature in the amazon.com webpage of the book "Fundamentals of electric theory and circuits" by Sridhar Chitta with a few pages of Chapter 1 which may be viewed and also which you may swipe left or press < icon to view the foreword, preface and Table of Contents. The contents of the above book by Sridhar Chitta, make a distinct unified approach to electrostatics and a few advanced circuits like coupling signals to amplifiers, lending precision and clarity to the topics which is not found in most text books. The book comes alongwith a CD with animated power point presentations for all chapters and voltage regulator, RC phase shift oscillators and differential amplifiers included additionally. For a lecture by Prof Ruth Chabay on surface charge in a simple dc circuit visit ua-cam.com/video/-7W294N_Hkk/v-deo.html
muhammad asad this happens only for a faction of second then if we put off battery then they will act as an insulator as there will be no free charges but if we put battery there will be collisions and charge carriers will be produced and it will act as a conductor till there is battery pot diff more than pot barrier... Hope This Helps..
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Sir, The reason I gonna pass my ECE subject in B.Tech 1st year is you. Thank you sir.
Mr Shree wow
Me too
R.I.P sir. Your good deeds and contribution definitely wont go to waste!
Now in last year of BSc. Studying from you from class 11 sir. My basics are pretty better than my batch mates.
I owe all this to you. You are God of Physics and a very kind soul. May you live long
He is dead. (RIP)
I have been trying to understand semiconductor since my fresher year , thanks to you sir ..u finally resolved my doubt .
Clears each and every point...hats. off to u...lots of respect🙏
Sir i am repenting why i wasted money on tutions 😔
Sir you are awesome 😍
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best teacher i have come across youtube
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Respect you 😀🙆
Sorry to say but he is no more now🥺
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Sir why we take this only in decimal no than whole number
The barrier potential for silicon with typical doping concentration is 0.7V.
You could also change the barrier potential in simple ways. One would be to alter the doping concentration. Increasing the N side doping or P side doping or both would increase the barrier potential.
Decreasing the doping concentrations would decrease the barrier potential.
Alternatively for same concentration of doping you can have different barrier potential if you change the semiconductor material itself. Ex Si to Ge.
Germanium has potential barrier 0.3. Much significantly lesser than silicon.
Higher number of intrinsic carrier concentration decreases the barrier potential.
Was helpful thx sir..respect🙏🙌💕💕
Sir how potential difference can have direction?
Amazing video sir !!!
You are the last hope of physics.
best teacher
It is given as 0.3eV for Ge in ncert sir 8:34
How can electrons jump at same potential??? 5:34
When same voltage occur ,potential Barrier get zero value means no opposition force is applied to cross the junction ,now electron get easily move towards hole side
Depletion layer starts to shrink because both potentials are equal. The condition for depletion layer to destroy or shrink and the for the electrons to flow, the applied voltage should be GREATER THAN OR EQUAL TO the barrier potential
If applied voltage more than induced voltage then what will happened sir
What is a pn junction ?
A pn junction allows current in one direction only. It blocks current in the reverse direction.
When a pn junction is formed, a potential barrier designated Vo comes into existence and is typically around 0.6 to 0.7 volts for silicon junctions.
When the barrier whose Vo is 0.7 volts is disturbed by applying a forward bias of say, 0.6 volts, the current increases and the increase becomes steep for small increments of the forward bias value a little greater than 0.68 volts. Large currents are observed when the forward bias is 0.69 volts which is closer to the barrier voltage of 0.7 volts.
The forward bias can never exceed the potential barrier voltage nor can it bring the barrier down to zero volts. That is the reason you seldom see current vs volt graphs of pn junction diodes beyond a volt or so.
How does the bias remain less than the barrier in an operational diode?
The voltage bias applied drops in the bulk neutral regions of the diode.
A detailed description of the pn junction with a distinct approach using surface charges, alignment of Fermi levels, creation of the barrier, the distinct processes of diffusion, drift, recombination and the influence of the electric field on the energies of electrons is provided in the following textbooks.
Electrostatics and circuits belong to one science and not two, that of electricity and magnetism. To know how they are unified visit this link
matterandinteractions.org/articles-talks/ and view the article 'A unified treatment of electrostatics and circuits. B. Sherwood and R. Chabay, unpublished. (1999)'
pdf.
For a live demonstration of surface charge and its effects in circuits visit
ua-cam.com/video/U7RLg-691eQ/v-deo.html
For a detailed discussion of surface charge, coulomb's law, electric fields, fields of dipoles and other charge configurations, parallel plates, capacitance, currents, conservation of charge, conservation of current, superposition of fields, superposition of potential, simple dc circuit, magnetic fields, magnetic fields of a current element, straight wire, current loop, solenoids, biot-savart law, voltage, voltage source, difference between e.m.f. and potential difference, ideal voltage sources, resistors, how current branches in a parallel circuit, capacitors, inductors, faraday's law, inductance, ac circuits, transmission lines, motors, generators, p-n junction diodes, electromagnetic waves, antennas and radiation, new electrodynamic theories on the nature of the electric field, see "Electric and Magnetic Interactions" by Chabay and Sherwood
www.matterandinteractions.org
or
Fundamentals of electric theory and circuits by Sridhar Chitta
www.wileyindia.com/fundamentals-of-electric-theory-and-circuits.html
There is a "look inside" feature in the amazon.com webpage of the book "Fundamentals of electric theory and circuits" by Sridhar Chitta with a few pages of Chapter 1 which may be viewed and also which you may swipe left or press < icon to view the foreword, preface and Table of Contents. The contents of the above book by Sridhar Chitta, make a distinct unified approach to electrostatics and a few advanced circuits like coupling signals to amplifiers, lending precision and clarity to the topics which is not found in most text books.
The book comes alongwith a CD with animated power point presentations for all chapters and voltage regulator, RC phase shift oscillators and differential amplifiers included additionally.
For a lecture by Prof Ruth Chabay on surface charge in a simple dc circuit visit
ua-cam.com/video/-7W294N_Hkk/v-deo.html
Respected sir!! If we switch off the battery after barrier potential then will the diode keep on conducting without battery voltage support???
muhammad asad we need to overcome the barrier to conduct electricity... If you disconnect the battery how will we overcome the barrier....?
muhammad asad this happens only for a faction of second then if we put off battery then they will act as an insulator as there will be no free charges but if we put battery there will be collisions and charge carriers will be produced and it will act as a conductor till there is battery pot diff more than pot barrier...
Hope This Helps..
Sir, when we apply voltage is maximum to barrier potential then what become ?
Will they not recombine when depletion layer has gone.. If no why.. If yes how come the Current came
best video on the world I promote this
thanks a lot!!!
Sir this is always .7 and .2 or either different ?
it could be anything
For silicon diode you can take 0.7V as standard.... And for Ge diode 0.3V
Chanchal Singh no
.7 and.3
Sir I depend on you
Why flow of current is opposite to direction of flow of flow of electron
Refer current electricity
Love you my dear sir
Love u sir
As u say Nh=Ne
Prove it
It was already proven practically , hence its a known fact
Wow
Make it more lucid
Totally Wrong concept..please follows Neaman..or follow nptel lectures by S karmalkar..
RIP
plz speak in hindi also