for intrinsic gallium arsenide, the room temperature electrical conductivity is 10-6 (ωm)-1; the electron and hole mobilities are 0.85 and 0.04 m2/vs respectively. compute the intrinsic carrier 2/vs respectively. compute the intrinsic carrier concentration ni at room temperature.
Brilliant! Very thorough. Quasi-fermi energies describe materials that are NOT in thermal equilibrium.
Very attractive lecture..
Because the expression is independent of Fermi energy Ef under Boltzmann approximation. Bless you!
Background music is funky
for intrinsic gallium arsenide, the room temperature electrical conductivity is 10-6 (ωm)-1; the electron and hole mobilities are 0.85 and 0.04 m2/vs respectively. compute the intrinsic carrier 2/vs respectively. compute the intrinsic carrier concentration ni at room temperature.
Sir please solve this and make a video step by step
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Thank you so much sir 🙏🙏🙏🙏
sir you said h cross square but it is only h square please check I can be wrong
thank you so much
Thank you sir
too formal, need to explain the concepts sir!!!! tnx
Just saying the terms can be done by memory, sir I would like to explain the concept
need to explane how we reduce phonons and impurities in bulk semiconductors devices. because they are resistor or resist the electron flow
10:30
marcos1289 pucku
32:44
Plz give notes as soon as possible
Intro music is super
Nice lecture
sir! what are the effect of carrier concentration of metal with increasing temperature
so how i calculate electron concentration using joyce
sir how can I draw Fermi level of ntype , ptype intrinsic semiconductor with increas in temp plz reply me
17:32 the value of Nv and Nc is not right , there 2π written in denominator will be in numerator!!!!
Maybe u got confused with 'h' and 'h bar'. h bar is h/2π . Hope this helps
@@shravyach5331 ohh thanks
@@shravyach5331 Exactly
Please do the translation to Arabic
Not interesting