Hi around 33:16 you said that the effective mass of HH is lower. I thought the effective mass of HH is higher which gives lower mobility. It looks like the tensile strain is better in the case of your plot. Can you elaborate on this? Thanks!
Thank you for your insightful question. I apologize for any confusion caused by the slide presentation. The images attached to the slide are indeed stitched together from different sources and not from the same paper, which might have led to some misunderstanding. To clarify, the terms Heavy Hole (HH) and Light Hole (LH) are indeed based on the no strain condition of the semiconductor material. It's correct that the effective mass of HH is higher, which typically results in lower mobility compared to LH under no strain conditions. However, when tensile strain is applied, the situation can change significantly. The impact of tensile strain on the band structure and, consequently, on the mobility of carriers (holes in this case) is complex and depends on several factors, including the direction of the strain and the specific channel material being used. Tensile strain can alter the energy levels of HH and LH, as well as their effective masses, which in turn affects their mobility. In some cases, tensile strain can indeed enhance the mobility of HH or make the mobility differences between HH and LH less pronounced, depending on how the strain modifies the band structure. It's important to note that the effects of strain on energy levels and mobility are highly dependent on the material properties and the strain's directionality. This means that the specific outcomes can vary widely across different semiconductor materials and strain configurations. Again, I appreciate your question, and I hope this explanation helps to clarify the situation. The interplay between strain, energy levels, and mobility is a nuanced topic that highlights the complexity of semiconductor physics and the importance of considering all factors in device design and analysis.
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Hi around 33:16 you said that the effective mass of HH is lower. I thought the effective mass of HH is higher which gives lower mobility.
It looks like the tensile strain is better in the case of your plot.
Can you elaborate on this?
Thanks!
Thank you for your insightful question. I apologize for any confusion caused by the slide presentation. The images attached to the slide are indeed stitched together from different sources and not from the same paper, which might have led to some misunderstanding.
To clarify, the terms Heavy Hole (HH) and Light Hole (LH) are indeed based on the no strain condition of the semiconductor material. It's correct that the effective mass of HH is higher, which typically results in lower mobility compared to LH under no strain conditions. However, when tensile strain is applied, the situation can change significantly.
The impact of tensile strain on the band structure and, consequently, on the mobility of carriers (holes in this case) is complex and depends on several factors, including the direction of the strain and the specific channel material being used. Tensile strain can alter the energy levels of HH and LH, as well as their effective masses, which in turn affects their mobility. In some cases, tensile strain can indeed enhance the mobility of HH or make the mobility differences between HH and LH less pronounced, depending on how the strain modifies the band structure.
It's important to note that the effects of strain on energy levels and mobility are highly dependent on the material properties and the strain's directionality. This means that the specific outcomes can vary widely across different semiconductor materials and strain configurations.
Again, I appreciate your question, and I hope this explanation helps to clarify the situation. The interplay between strain, energy levels, and mobility is a nuanced topic that highlights the complexity of semiconductor physics and the importance of considering all factors in device design and analysis.