FDNS21: Epitaxial Growth of Transition Metal Dichalcogenides - Wafer-scale Single Crystal Monolayers

Поділитися
Вставка
  • Опубліковано 11 лип 2024
  • 2021.01.20
    Joan Redwing, Penn State University, University Park, PA
    This talk is part of FDNS21: Future Directions in Nanomaterial Synthesis: From Rational Design to Data-Driven Manufacturing workshop sponsored by Nanomanufacturing (nanoMFG) Node at the University of Illinois at Urbana-Champaign. Presentations for this workshop can be found on nanoHUB at nanohub.org/resources/35001
    Table of Contents:
    00:00 Epitaxy in 2D: The path to wafer-scale single crystal monolayers and heterostructures
    01:19 Layered materials….beyond graphene
    01:42 2D TMDs - Intriguing Properties & Physics
    02:14 Substrates for TMD epitaxy
    04:11 Considerations for Vapor Phase Synthesis
    05:36 Metalorganic Chemical Vapor Deposition
    07:40 Wafer-scale thickness uniformity
    09:27 MOCVD Process Modeling
    11:04 Multi-scale Modeling of WSe2 Growth
    11:48 Three step process for WSe2 MOCVD
    13:28 Lateral Growth - Effect of Substrate Temperature
    16:10 Lateral Growth of WSe2 Islands
    17:21 Preferential alignment of WSe2 domains
    18:54 Origin of step-induced alignment
    20:37 Epitaxial WS2 monolayers on sapphire
    22:24 Water-based transfer process for TMDs
    22:57 Microstructure of WS2 monolayer
    24:48 TEM analysis of line defects
    26:07 Nearly single crystal WS2 monolayer
    26:48 Wafer-scale epitaxial TMDs on sapphire
    27:01 Photoluminescence of WS2 monolayers
    28:36 Field-Effect Device Comparison
    29:23 Benchmarking Wafer-Scale MoS2 and WS2 FETs
    30:28 2D Crystal Consortium
    31:52 Lifetime Sample Tracking (LiST) Database
    33:32 Acknowledgements
  • Наука та технологія

КОМЕНТАРІ • 1