QuTech360 w/ Jiwon Yun: High-fidelity gates for spin qubits in diamond
Вставка
- Опубліковано 11 вер 2024
- In this QuTech360 Seminar, Jiwon Yun, PhD in Taminiau Lab, Quantum Internet Division at QuTech, presents High-fidelity gates for spin qubits in diamond. For the biography and abstract, please see the description below.
Title:
High-fidelity gates for spin qubits in diamond
Speaker:
Jiwon Yun
Abstact:
Spin qubits in solid-state materials are gaining significant attention for realizing quantum internet and distributed quantum computation due to the recent advances including entanglement over a three-node network1 and the fault-tolerant operation of a logical quantum bit of and error correction code2. For further demonstration of larger quantum networks and computation, an important challenge is to characterize and improve the gate set used in the algorithms for quantum applications. In this work, we use gate set tomography(GST)3 to characterize the single- and two-qubit gates used in the nitrogen-vacancy defect system in diamond. From the two-qubit GST report, we find average gate fidelities that exceed 99.9 %. We further discuss the current limitations of the gates by comparing the experimental results with numerical simulations. These results will help understanding and improving the gate fidelities of the spin qubits, subsequently accelerating the progress towards quantum information processes and quantum networks based on spin qubits in solid-state materials.
Biography of Jiwon Yun:
Jiwon Yun is a post-doc in Taminiau’s group with a research focus of characterizing quantum gates on spins in solid-state. He did his phD in Seoul National University in South Korea, studying the interaction between an NV center and its environment, focusing both on the interaction between the NV center and carbon nuclear spins and the interaction between NV center and its thermal environment. After that, he moved to TU Delft as a post doc, with a research focus on characterizing the quantum gates applied to the NV center system.
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