Directions: These questions consist of two statements, each printed as Assertion and Reason. While answering these questions, you are required to choose any one of the following four responses. (a) If both Assertion and Reason are correct and the Reason is a correct explanation of the Assertion. (b) If both Assertion and Reason are correct but Reason is not a correct explanation of the Assertion. (c) If the Assertion is correct but Reason is incorrect. (d) If both the Assertion and Reason are incorrect. 1.Assertion : Silicon is preferred over germanium for making semiconductor devices. Reason : The energy gap in germanium is more than the energy gap in silicon. 2. Assertion : A pure semiconductor has negative temperature coefficient of resistance. Reason : In a semiconductor on raising the temperature, more charge carriers are released, conductance increases and resistance decreases. 3. Assertion : In semiconductors, thermal collisions are responsible for taking a valence electron to the conduction band. Reason : The number of conduction electrons go on increasing with time as thermal collisions continuously take place. 4. Assertion : A p-type semiconductors is a positive type crystal. Reason : A p- type semiconductor is an uncharged crystal. 5. Assertion : The diffusion current in a p-n junction is from the p-side to the n-side. Reason : The diffusion current in a p-n junction is greater than the drift current when the junction is in forward biased. 6. Assertion : When two semi conductor of p and n type are brought in contact, they form p-n junction which act like a rectifier. Reason : A rectifier is used to convent alternating current into direct current. 7. Assertion : The number of electrons in a p-type silicon semiconductor is less than the number of electrons in a pure silicon semiconductor at room temperature. Reason : It is due to law of mass action. 8.Assertion: The output of a half wave rectifier contains only DC . Reason: A half wave rectifier converts AC into DC. 9. Assertion : Electron has higher mobility than hole in a semiconductor. Reason : The mass of electron is less than the mass of the hole. 10. Assertion : The value of current through P−n junction in the given figure will be 10mA. Reason : In the above figure, p-side is at higher potential than n-side. 
Directions: These questions consist of two statements, each printed as Assertion and Reason. While answering these questions, you are required to choose any one of the following four responses.
(a) If both Assertion and Reason are correct and the Reason is a correct explanation of the Assertion.
(b) If both Assertion and Reason are correct but Reason is not a correct explanation of the Assertion.
(c) If the Assertion is correct but Reason is incorrect.
(d) If both the Assertion and Reason are incorrect.
1.Assertion : Silicon is preferred over germanium for making semiconductor devices.
Reason : The energy gap in germanium is more than the energy gap in silicon.
2. Assertion : A pure semiconductor has negative temperature coefficient of resistance.
Reason : In a semiconductor on raising the temperature, more charge carriers are released, conductance increases and resistance decreases.
3. Assertion : In semiconductors, thermal collisions are responsible for taking a valence electron to the conduction band.
Reason : The number of conduction electrons go on increasing with time as thermal collisions continuously take place.
4. Assertion : A p-type semiconductors is a positive type crystal.
Reason : A p- type semiconductor is an uncharged crystal.
5. Assertion : The diffusion current in a p-n junction is from the p-side to the n-side.
Reason : The diffusion current in a p-n junction is greater than the drift current when the junction is in forward biased.
6. Assertion : When two semi conductor of p and n type are brought in contact, they form p-n junction which act like a rectifier.
Reason : A rectifier is used to convent alternating current into direct current.
7. Assertion : The number of electrons in a p-type silicon semiconductor is less than the number of electrons in a pure silicon semiconductor at room temperature.
Reason : It is due to law of mass action.
8.Assertion: The output of a half wave rectifier contains only DC .
Reason: A half wave rectifier converts AC into DC.
9. Assertion : Electron has higher mobility than hole in a semiconductor.
Reason : The mass of electron is less than the mass of the hole.
10. Assertion : The value of current through P−n junction in the given figure will be 10mA.
Reason : In the above figure, p-side is at higher potential than n-side.