По тылам РФ таки ударят! Генассамблея ООН обсудит ВОПРОС в октябре

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  • Опубліковано 18 вер 2024
  • Решение об ослаблении западных ограничений на удары дальнобойным оружием по целям в РФ, вероятно, обсудят на встрече мировых лидеров на Генассамблее ООН в США. Встреча состоится в конце этого месяца. Могут ли союзники принять положительное для Украины решение - в прямом эфире телеканала FREEДОМ говорим с политическим экспертом, военнослужащим ВСУ Александром Антонюком.
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КОМЕНТАРІ • 7

  • @FREEDOM_TV
    @FREEDOM_TV  11 годин тому

    Узнавайте оперативные новости первыми в Telegram FREEДОМ: t.me/tv_freedom

  • @user-AlekseiBars
    @user-AlekseiBars 7 годин тому +1

    Не законно захватили власть, о каком праве вы рассуждаете? Вас имеет кто хочет и как хочет...

  • @Real_Berserker
    @Real_Berserker 11 годин тому +1

    DETAILED EXPLANATION OF HOW TO OBTAIN PURE SILICON:
    Semiconductor with ultra-high conductivity based on germanium:
    Bring tantalum to a boil (28 - 30% by weight), reduce the boiling point of tantalum to the boiling point of lead and add lead (3 - 5% by weight), then slightly reduce the boiling point of this mass to the boiling point of germanium and add germanium (the remaining percentage is 65 - 69% by weight). When the resulting alloy becomes homogeneous, then upon cooling it we obtain an alloy of a semiconductor based on germanium with ultra-high conductivity.
    Adding thallium 1% or bismuth 1% gives p- and n-type conductivity.
    To add thallium or bismuth, you need to heat the resulting alloy to the boiling point of thallium (1457°C) or bismuth (1564°), add 1% thallium or 1% bismuth to this alloy, and when the mass of this alloy becomes homogeneous, then this alloy needs to be cooled.
    An element with a 5-valent bond creates "n" type conductivity (electron conductivity) in a 4-valent semiconductor.
    An element with a 3-valent bond creates "p" type conductivity (hole conductivity) in a 4-valent semiconductor.
    To obtain pure silicon, we need to create an alloy with semiconductor properties, for this we combine sulfur (S) - 54% by weight (boiling point 444.6 ° C), beryllium (Be) - 40% by weight (boiling point 2507 ° C) and carbon (C) - 6% by weight (carbon at atmospheric pressure does not even have a melting point, since its triple point is 10.8 ± 0.2 MPa (106.6 ± 2.0 atm) and 4330 ± 300 ° C, so carbon sublimates at a temperature of about 3630 ° C. At temperatures above 1000 ° C, carbon interacts with many metals, forming oxides.
    The most important property of carbon is the ability of its atoms to form very strong chemical bonds between themselves, as well as between themselves and other elements. Another ability of carbon is to form 4 equivalent valence bonds with other carbon atoms, which allows building carbon skeletons of different types (linear, branched, cyclic). It is these properties that explain the exceptional role of carbon in the structure of all organic compounds and, in particular, all living organisms. Therefore, first we bring carbon to a temperature slightly above 3630 ° C. Then we lower this temperature to the boiling point of beryllium (2507 ° C) and lower beryllium into this sulfur to form a homogeneous mass, then we lower the temperature of this mass to the boiling point of sulfur (boiling point 444.6 ° C) and lower sulfur into this mass to form a homogeneous mass. Then this mass should cool. You will get pure flint.
    To obtain silicon diodes, transistors and microcircuits with ultra-high conductivity and heat-resistant properties, withstanding very high voltage, high current and power, it is necessary to cover a silicon plate with two metal plates on both sides, and pass a low-voltage direct current of low frequency of 3 Hz through the silicon plate itself. Then gradually increase the voltage passing through the silicon plate, and simultaneously heat the metal plates that press the silicon plate on both sides. Under the influence of these processes, the silicon increases its hardness and then becomes very hard. This means that silicon has ultra-high conductivity. Adding boiling thallium or boiling bismuth to the silicon plate at 1% each gives conductivity of the "n" or "p" type.
    Thank you very much,
    The Grand Duke of Kyiv and the Prince of Denmark Michael Milyutin.

  • @БарановаМелания
    @БарановаМелания 4 години тому

    ООН за права человека топит. А тут обсуждение ударов по российским городам. Ну-ну

  • @iohanvarennikov4054
    @iohanvarennikov4054 11 годин тому +1

    Ну что ж. По тылам НАТО тоже ударят.

    • @simkunaskestutis6467
      @simkunaskestutis6467 55 хвилин тому

      Живу в НАТО, в Вильнюсе. Привыкай к тому, что запретим в Литве русские школы и снесем в Литве все православные церкви. И еще имеем за 200 тыс. заложников русских - обменный фонд для украинцев. Поинтересуйся, чем окончили в Литве в 1942 г. 200 тыс. евреев - тоже какие то понятки качали.