sir in the approximate equivalent circuit of IGBT where the pnp transistor with its base is connected with gate drive circuit,there current is flwing from the cllector to the base and through the drift resistance to the emitter.but we know the in pnp transistor major current flows through the collector to the emitter.then why major cullector current goes through the collector to the base and leakage current flows through the collector to the emitter?
When resistance of drift region will more decrease(same kind of charge (only electron or only hole )or opposite polarity of charge(hole &electron) exist?
Drift region resistance will be less for both (electron and holes ) like in BJT and in IGBT because of dual injection . And for MOSFET drift region resistance will be less (only one type carrier).
Sir it's a humble request , please solve some numericals i.e.dpp on transformer and synchronous machine for gate and ese as soon as possible to make grip on these topics. It's very diffcult to solve electrical machines questions 🙏🙏🙏🙏
Great explanation sir.. this the 1st time that I understood IGBT with good concept. Thank you 😊.
one of the best lecture available
Very good lecture Sir. Thanks 🙏🙏🙏🙏🙏🙏🙏🙏🙏
Thank you so much sir..this video's cleared my all doubts
Sir Becuz there is kind of inbuilt scr so will igbt be a unipolar or bipolar device..🙏🙏
Superb sir. Keep up the great work.
sir in the approximate equivalent circuit of IGBT where the pnp transistor with its base is connected with gate drive circuit,there current is flwing from the cllector to the base and through the drift resistance to the emitter.but we know the in pnp transistor major current flows through the collector to the emitter.then why major cullector current goes through the collector to the base and leakage current flows through the collector to the emitter?
Please explain how the Miller capacitor is forming by it's construction
Sir,
Please describe three phase inverter circuit using igbt.
What is the purpose of using two n+ region on right and left corner??
what is the purpose of two n+ regions on extreme left and right side??
6:07
How 'n' is more positive with respect to 'p'
Sir what is feedback
When resistance of drift region will more decrease(same kind of charge (only electron or only hole )or opposite polarity of charge(hole &electron) exist?
Drift region resistance will be less for both (electron and holes ) like in BJT and in IGBT because of dual injection . And for MOSFET drift region resistance will be less (only one type carrier).
How the drift region resistance decrease as two kind of charge hole & electron injected in drift region not only electron or hole?time line10:08
Sir it's a humble request , please solve some numericals i.e.dpp on transformer and synchronous machine for gate and ese as soon as possible to make grip on these topics. It's very diffcult to solve electrical machines questions 🙏🙏🙏🙏
sir, why IGBT has positive temp coefficient?
@@lecturesinelectricaleng But sir, how come IGBT has no minority carriers, cause as u told in lecture,there is also a P+ substrate layer.
@@lecturesinelectricaleng Now I got it, thank u so much sir !! I am a regular viewer of your lectures and this is really very helpful.
Thank you sir
Thanks a lot sir