@venkat .. because in n-type already so many electrons are there, so these excess electrons can't affect anything... example. 10000 electrons + 100 excess electrons , total no of electrons = we can say approximately 10000 electrons only right..
Sir I hope You will continue. Literally crying at the moment because you are not uploading anymore. If you read this Plz tell me how Generation rate is more than Recombination rate. As you said Increment in hole concentration is the difference between them.
Learning Z Everything Sir In n type SC, When at t = 0 Radiation is off, holes starts recombining with electrons at VB? Also I didn't understand when Recombination rate and Generation rate is same ,why Increment is Hole conc. per unit time is not equal to zero.
ramanjaneyulu jagannadh see minority carriers are small in number majority carriers are large in number..so when radiation falls electrons and holes will be generated , those will be added to minority and majority carriers..but majority carriers doesn't change much ( 100000000+100 means 100000000) but minority carriers will effect ( 1000+ 100 = 1100)
this is actually no where on internet.🙌🙌🙌🙌🙌🙌
@venkat .. because in n-type already so many electrons are there, so these excess electrons can't affect anything... example. 10000 electrons + 100 excess electrons , total no of electrons = we can say approximately 10000 electrons only right..
Your initiative is helping lots of students. Keep doing your effort.
Respect from the depth of my heart 👌👌👌👌👌👌👌👏👏👏👏
excellent sir, I think you refer millman halkias-integrated electronics.... Anyhow thank you sir
Wow,I really liked the video thank you
Doing great job
दर्मल agitation 😎😆😆
Btw great video !! Thanks sir .
Sir,I recently watched ur videos it is very good enough to understood even a average student,but I am requesting u to appload CS videos sir
Thank you so much. Big doubt cleared!
Sir, at 15:50 how at steady state p = p0 ? It should be p=p0 + Del(p)
It's for the ease of concepts. As light is off we imagine all excess electrons have recombined.
Sir thank you very much, keep doing like this . I understood the concept well
AT T=0(STEADY STATE ) YOU SAID THAT P=P0(EXCESS HOLES RECOMBINE WITH ELECTRON ) AND IN GRAPH AT T=O YOU SAID THAT P=P0 +DEL P ??
Dear sir in recombination rate how it is equal to P/tp and why in this expression hole concentration is P and not Po
actually it is P-P0 not P...
whatever the excess holes that will be recombine so P-P0 or DelP = P-P0
If P0 is very small compared to P then we can take Delp = P (approx)
thank you sir got it
your lecture is very helpful for me :)
Sir I hope You will continue. Literally crying at the moment because you are not uploading anymore.
If you read this Plz tell me how Generation rate is more than Recombination rate.
As you said Increment in hole concentration is the difference between them.
no actually generation rate will be equal to recombination rate..
Learning Z Everything Sir In n type SC, When at t = 0 Radiation is off, holes starts recombining with electrons at VB?
Also I didn't understand when Recombination rate and Generation rate is same ,why Increment is Hole conc. per unit time is not equal to zero.
Sir please upload control system videos. For ece.
Why does effect on only minority charge carriers due to radiation ?sir
ramanjaneyulu jagannadh see minority carriers are small in number majority carriers are large in number..so when radiation falls electrons and holes will be generated , those will be added to minority and majority carriers..but majority carriers doesn't change much ( 100000000+100 means 100000000) but minority carriers will effect ( 1000+ 100 = 1100)
dhere nhi pdha skte sir
please explain clearly and class is very speed........