B. 20/3 V, 1/3 ohm Requi.= 1)4 times 2 ohm in parallel.. 2/4=1/2.. and this is parallel to 1 ohm.. 2)Requi.=1||1/2=3/2 Vth= 1) replace 10 v in current source.. is gets. 5A source in parallel with 2 ohm 2)add all currents=20 Amp And Requi.=1/3 3) to find Vth= I×R =20×1/3= 20/3V in series with 1/3 ohm
GTO-Gate turn off thyristor
Layers-4 ,Junction-3 , terminals- 4 (Anode, Cathod, anode gate, cathod gate)
wrong right answer is TLJ 343 respectively
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sir please make a video for arunachal ae mains topics and question we shud prepare and focus more
sir power diode is a 4 layer not a 3 layer and pwower diode is a shockley diode which acts as a relaxation osscilator
B. 20/3 V, 1/3 ohm
Requi.=
1)4 times 2 ohm in parallel.. 2/4=1/2.. and this is parallel to 1 ohm..
2)Requi.=1||1/2=3/2
Vth=
1) replace 10 v in current source.. is gets. 5A source in parallel with 2 ohm
2)add all currents=20 Amp
And Requi.=1/3
3) to find Vth= I×R =20×1/3= 20/3V in series with 1/3 ohm
GTO is 4 layer PNPN device having 3 PN junctions and 3 terminals Gate (G), Anode (A), and Cathode (C)
Gto has large reverse blocking capacity is true so ans is both 2 and 3 not only 2
In i-v charactistic what are the x-y components?? U hv taken ques on i-v char or scr..
1
Answer of question
The values of voltage source and resistor are
b) 20/3V , 1/3ohm
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10:57 bipolar
B. 20/3V , 1/3 Ω
B is the correct answer
IGBT :-BIPOLAR DEVICE
Thank you sir
Option B
Question for us answer B .
GTO - GATE TURN OFF thyristor
Pins MT1 , MT2 and Gate
4 layes as same as SCR
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Option b
Igbt is bipolar device
Igbt is bipolar
Igbt is unipolar
B
IGBT has switching speed is higher than that of the MOSFET ........this statement is true.
wrong
No it's wrong
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Opt b
Bipolar
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