Here is addition information and clarification from measurement Guru, Steve Sandler. "Measuring the voltage and current is Total loss. switching loss at the edges and the conduction loss during the on time. This requires fast probes and accurate deskewing. Switiching loss is just the edge energy so a gated measuement. The I^2*Rdson is conduction loss and needs to be gated to remove the switching energy from the edges. Its is also important not to include snubbers in the current measurement". Thank you Steve for your valuable inputs!
Hi, great video. I have my thoughts on this power loss, maybe it's wrong, I hope you can help me & figure it out together. I believe Vds*Ids gives the total power loss in MOSFET. Total power loss = Conduction loss + Switching loss. Conduction loss (Ids_on^2 * R_on) occurs when the MOSFET is gated during turn-on time and you measured as 687.77 mW. Switching loss occurs during the edges of turn-on & turn-off MOSFET, it includes charging & discharging the gate of MOSFET, body diode turn-on & turn-off, etc, and is related to switching frequency. You measured Vds*Ids as 1.19 W. So does that mean switching loss should be the difference between these two power loss: Switching loss = Total power loss (1.19 W) - Conduction loss (687.77 mW) = 502 mW ?
You are absolutely correct in your explanation. Steve Sandler pointed this out last night and I added this to the link en posting. I will this also to the UA-cam posting. Thank you catching that oversight! You are very smart in picking that up!
Hi Jordan, I like the scope. I am saving up to buy one. The unit I had was a demo and I had to return it. I am sure if you ask, Siglent will send you one to try out.
Here is addition information and clarification from measurement Guru, Steve Sandler. "Measuring the voltage and current is Total loss. switching loss at the edges and the conduction loss during the on time. This requires fast probes and accurate deskewing. Switiching loss is just the edge energy so a gated measuement. The I^2*Rdson is conduction loss and needs to be gated to remove the switching energy from the edges. Its is also important not to include snubbers in the current measurement". Thank you Steve for your valuable inputs!
Such a great video!
Thank you for sharing.
My pleasure!
Hi, great video. I have my thoughts on this power loss, maybe it's wrong, I hope you can help me & figure it out together. I believe Vds*Ids gives the total power loss in MOSFET. Total power loss = Conduction loss + Switching loss. Conduction loss (Ids_on^2 * R_on) occurs when the MOSFET is gated during turn-on time and you measured as 687.77 mW. Switching loss occurs during the edges of turn-on & turn-off MOSFET, it includes charging & discharging the gate of MOSFET, body diode turn-on & turn-off, etc, and is related to switching frequency. You measured Vds*Ids as 1.19 W. So does that mean switching loss should be the difference between these two power loss: Switching loss = Total power loss (1.19 W) - Conduction loss (687.77 mW) = 502 mW ?
You are absolutely correct in your explanation. Steve Sandler pointed this out last night and I added this to the link en posting. I will this also to the UA-cam posting. Thank you catching that oversight! You are very smart in picking that up!
@@RobertBolanos Thank you, you post great videos and I subscribed.
Hi Robert. Thank you for informatic video.
Can we do power analysis of offline SMPS on SDS2104X PLUS ?
Thanks for the videos Robert subscribed. How are you finding the new scope?
Hi Jordan, I like the scope. I am saving up to buy one. The unit I had was a demo and I had to return it. I am sure if you ask, Siglent will send you one to try out.
@@RobertBolanos Thanks for the reply, Just ordered one! Great videos by the way