3D simulation of conductive nanofilaments in multilayer h-BN memristors. A circuit breaker approach

Introduction. Memristor Basics and Operation- 00:00
Memristors in Nonvolatile Memories and Neural Networks - 00:35
Fabricating Advanced Memristors - 00:45
Role of Native Defects in Memristors - 02:10
Simulator Description and Operation - 02:36
Conductive Nanofilament Formation and Rupture - 04:23
Role of the temperature - 04:52
Reproduction of Experimental Set and Reset Processes - 05:03
A 3D simulation of conductive nanofilaments (CNF) in multilayer h-BN memristors is performed. To do so, a simulation tool based on circuit breakers is developed including for the first time a 3D resistive network. The circuit breakers employed can be modeled with two, three and four resistance levels; in addition, a series resistance and a module to account for quantum effects, by means of the quantum point contact model, are also included. Finally, to describe real dielectric situations, regions with a high defect density are modeled with a great variety of geometrical shapes to consider their influence in the resistive switching process. The simulator has been tuned with measurements of h-BN memristive devices that have been fabricated with CVD grown h-BN layers and later electrically and physically characterized. We show the formation of CNFs that accounts for filamentary charge conduction in our devices. Moreover, the simulation tool is employed to describe partial filament rupture in reset processes and show the low dependence of the set voltage on the device area that is seen experimentally.