Spin-orbit torque RAM bi-directional read method and examination of magnetization switching behavior

TUS found an SOT-RAM-specific read disturb problem that was overlooked in previous studies so far, and solved it with the proposed bi-directional read method. We also examined the behavior of magnetization switching in this method. At the same time, we investigated the impact of SOT-RAM materials, dimensions, and array configurations on the solution, and obtained design guidelines for the effectiveness of this method.