It's superb sir, you made my day with this video. I had been waiting for a few days.Please continue with the setup and consider covering IC technology part which is rare to find anywhere else.
@@saumypandey2184 doping of base is less than collector, it will cause punch-through for low voltages itself. If the base doping is higher than collector, the expansion of depletion region in to base will be less and it will be more into the collector as the junction reverse bias is increased.
Very clear and precise explanation. Thanks a lot for your great effort. Just a little query: shouldn't it be n_E(-x_E) instead of n_E(-x_n) at the emitter junction?
Reverse saturation current flows due to excess minority carriers generated in p and n side, in forward bias, And Leakage current is current that flows due to reverse bias, because in revese bias current is expected zero but small current flows due to minority carriers present and hence that is called leakage.
No teacher can explain better than you Sir !! You are the best and your way of explaining things makes it more easier for students to understand.. I want to touch your feet Sir !!
vbe is used for n-type bjt and veb is used for p-type, bcz in p-type in order to keep bjt in active mode its emitter base should be forward biased , so p-type has + holes on p side hence emitter potential is +, and base has electrons hence base is -. therefore we take this as veb voltage
Acc to mass action law, the product of conc of electrons and holes is equal to square of intrinsic conc, n×p= ni^2, this os from where ni square has come.
It's superb sir, you made my day with this video. I had been waiting for a few days.Please continue with the setup and consider covering IC technology part which is rare to find anywhere else.
Sure Shubham.
i have studied the width of base is less then collector everywhere but in your all videos you r sying it in reverse way..??
you mean doping or really width?
Sorry i was talking about doping only.
@@saumypandey2184 doping of base is less than collector, it will cause punch-through for low voltages itself. If the base doping is higher than collector, the expansion of depletion region in to base will be less and it will be more into the collector as the junction reverse bias is increased.
But sir you have written NB>NC. This means doping of base is more than collector no?
Very clear and precise explanation. Thanks a lot for your great effort. Just a little query: shouldn't it be n_E(-x_E) instead of n_E(-x_n) at the emitter junction?
Could you please explain the differences between reverse saturation current and leakage current in BJT.
both are same
Reverse saturation current flows due to excess minority carriers generated in p and n side, in forward bias,
And Leakage current is current that flows due to reverse bias, because in revese bias current is expected zero but small current flows due to minority carriers present and hence that is called leakage.
No teacher can explain better than you Sir !! You are the best and your way of explaining things makes it more easier for students to understand.. I want to touch your feet Sir !!
thanks
Thanks sir ji....Aap analog bhi complete karwana sir please
Sure Dinesh. Will be doing Analog!
very clear cut explanation, we request you to please Make video on MOS capacitor if possible.
Sir ! Please a small doubt, Can i use Vbe instead of Veb.
vbe is used for n-type bjt and veb is used for p-type, bcz in p-type in order to keep bjt in active mode its emitter base should be forward biased , so p-type has + holes on p side hence emitter potential is +, and base has electrons hence base is -.
therefore we take this as veb voltage
Wat does ni saquare represent?
Acc to mass action law, the product of conc of electrons and holes is equal to square of intrinsic conc, n×p= ni^2, this os from where ni square has come.
Please upload communication system
Please to IC technology part sir
please check out your mike
Sir aapke bhrose hi h