(Part 3) How to Design, Build, and Test an RF Linear Amplifier (Input Board)

Поділитися
Вставка
  • Опубліковано 24 лис 2024

КОМЕНТАРІ • 20

  • @keithmaddox1469
    @keithmaddox1469 Місяць тому

    Thanks RF man. Another good design example which I enjoyed very much.

  • @pilobond
    @pilobond Рік тому +7

    Again, I really appreciate this series. At one point, could you show your LT Spice simulation for IRF510 input impedance? Are you measuring the input impedance at the primary side of the input transformer? VA3GPJ

    • @rfmanchannel6915
      @rfmanchannel6915  Рік тому +2

      I will show how to use LTSpice for impedance measurements in part 4 and yes the measurement is made on the input side of the transformer. I show the basics in Part 2.

  • @tawfiqulalam8928
    @tawfiqulalam8928 Рік тому +1

    Enjoyed a lot.

  • @ssubaihi
    @ssubaihi 2 місяці тому

    Thank U for such RF PA secrets , Hopefully you tell me best SHOP who give me all the Parts (in one Order)particularly
    if such a project available as a Kit with a Box though will be wonderful ..
    i am seeking for Original Parts , Not any junk source .

  • @johnjames378
    @johnjames378 Рік тому +4

    Fantastic, I'm learning a lot. Very thorough. Waiting for the next one.
    I am a bit confused. Question: The secondary is matched to 50 ohms, is this because the input Z of the IRF510 along with the input resistor is 50 ohms? Or are we just isolating the output of the radio from the input stage of the MOSFET and 50 ohms just happens to be the typical output Z of most radios and the MOSFET doesn't care about input ? In my mind I want to match the output of the transformer to the input Z of the MOSFET. Could you explain this please? Please correct my thinking.

    • @rfmanchannel6915
      @rfmanchannel6915  Рік тому

      The standard for all Radio Transceivers and most RF test equipment is 50 ohms (Output impedance). You need to match the input impedance of your RF Amplifiers to 50 ohms. The turns ratio of the input transformer is used to transform the impedance to achieve a 50 ohm match. I hope this helps. RF Man

    • @johnjames378
      @johnjames378 Рік тому +1

      @@rfmanchannel6915 Right, I got that part. My question is that do we have to then match the input Z of the MOSFET?

  • @geirha75
    @geirha75 11 місяців тому

    Thanks for interesting and really educational information on building amplifier. I have a question on the resistor across the transformer. Would be an idea to have a variable resistor there in order to fine tune the Q?

  • @kasperdasradio
    @kasperdasradio 9 місяців тому

    This is gold Sir.

  • @mihajlopetkovic2003
    @mihajlopetkovic2003 3 місяці тому

    How did you choose the values for the tuning capacitors in the output transformer?

  • @listings958
    @listings958 10 місяців тому

    Are the pages you display available for download?

  • @karwan6995
    @karwan6995 Рік тому

    ❤❤

  • @tahanprahara
    @tahanprahara Рік тому

    Can it design for 144mhz sir? Thankyou

    • @rfmanchannel6915
      @rfmanchannel6915  Рік тому

      The IRF510 will not operate at this frequency. I have a video for a 2 meter amplifier which may of interested in. ua-cam.com/video/UxdR1KoKc9I/v-deo.html

    • @tahanprahara
      @tahanprahara Рік тому

      @@rfmanchannel6915 to much power for me... would you like you teach me how to make booster for Hand Talkie 2m 20-60W Sir?

  • @dimitrijejakov3767
    @dimitrijejakov3767 8 місяців тому +1

    Where did you find the formula for calculating the minimum inductance of the primary winding of the RF transformer? That formula is incorrect. The reactive resistance or reactance of the primary winding of the RF transformer at the lowest operating frequency, in this case, 10MHz, should be 5 to 10 times greater than the input impedance, which is 50 ohms in this case. An inductance of 11.2uH for the two windings is acceptable because its reactance is approximately 7 times greater than 50 ohms. You are unclear about the input impedance of the IRF510 transistors. You've placed a 60-ohm resistor in parallel with the input impedance of both transistors, thus lowering the input impedance to 50 ohms and making it somewhat variable with frequency changes. The cost of this is increased drive RF power. The concept of adapting input power from this perspective is not good because it results in increased drive power. The correct way to maintain relatively constant input impedance over the range of 1.8 to 30MHz is through properly designed negative feedback drain-gate. The whole point is for such an amplifier to operate throughout the mentioned HF range and provide approximately uniform output RF power at the output. I have more criticisms, but for now, let's stick to these.

    • @krishnamohanrao642
      @krishnamohanrao642 25 днів тому

      Can you please give me some pointers to the design of the concept you are saying- "The correct way to maintain relatively constant input impedance over the range of 1.8 to 30MHz is through properly designed negative feedback drain-gate" . Can you share related app-note, design article or youtube video please? thank you!

    • @dimitrijejakov3767
      @dimitrijejakov3767 25 днів тому

      @@krishnamohanrao642 I don't have the information you're looking for right now, but read Motorola's publications and articles on the design and construction of broadband power amplifiers for the HF band. The publications are available on the internet in PDF format and you can download them.