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**Brand:** VBsemi
**Parameters:**
- **Package type:** SOT23
- **Channel type:** N-Channel
- **Operating voltage:** 30V
- **Continuous leakage current:** 6.5A
- **On-resistance:** RDS(ON) = 30mΩ @ VGS = 10V, VGS = 20V
- **Gate threshold voltage:** Vth = 1.2~2.2V
**Package:**
- SOT23
**Application Introduction:**
VBsemi's AM2306E3R-VB is an N-Channel trench field effect transistor designed for applications requiring 30V operating voltage and 6.5A continuous leakage current. Its low on-resistance (RDS(ON) = 30mΩ) performs well at gate voltages of 10V and 20V. The gate threshold voltage (Vth) is in the range of 1.2~2.2V, providing design flexibility in different application scenarios.
**Main Features:**
1. **Low on-resistance:** RDS(ON) = 30mΩ @ VGS = 10V, VGS = 20V.
2. **Wide operating voltage range:** The 30V operating voltage is suitable for a variety of power supply voltages.
3. **Suitable for a variety of application scenarios:** With flexible gate threshold voltage, it can achieve optimal performance in different application scenarios.
**Application fields:**
VBsemi AM2306E3R-VB is suitable for a variety of fields and modules, including but not limited to:
1. **Power management module:** Due to its low on-resistance and adaptable gate threshold voltage, it can be used for power switching and regulation circuits.
2. **Motor drive module:** Suitable for applications requiring efficient energy conversion and motor control.
3. **LED lighting:** Can be used in LED drive circuits to improve energy efficiency.
VBsemi AM2306E3R-VB provides reliable power switching solutions for various electronic devices and modules with its excellent performance and applicability."